公开(公告)号：SG2013053368A

公开(公告)日：2014-03-28

申请号：SG2013053368

申请日：2013-07-11

Applicant: GLOBALFOUNDRIES INC

Inventor： CARSTEN GRASS ,  MARTIN TRENTZSCH ,  BORIS BAYHA ,  PETER KROTTENTHALER

Abstract: A method comprises depositing a first portion of a first material layer on a semiconductor structure. A first run of a post-treatment process is performed for modifying at least the first portion of the first material layer. After the first run of the post-treatment process, a second portion of the first material layer is deposited. The second portion is formed of substantially the same material as the first portion. After the deposition of the second portion of the first material layer, a second run of the post-treatment process is performed for modifying at least the second portion of the first material layer.

公开(公告)号：SG193698A1

公开(公告)日：2013-10-30

申请号：SG2013007471

申请日：2013-01-30

Applicant: GLOBALFOUNDRIES INC

Inventor： ELKE ERBEN ,  MARTIN TRENTZSCH ,  RICHARD J CARTER

Abstract: 38 OF THE DISCLOSUREGenerally, the present disclosure is directed to techniques for improving the 5 reliability of semiconductor devices with high-k gate dielectric layers by passivating point defects during the gate stack formation. One illustrative method disclosed herein includes performing a plurality of material deposition cycles to form a high-k dielectric layer above a semiconductor material layer, and introducing a passivating material into a gaseous precursor that is used for forming the high-k dielectric layer 10 during at least one of the plurality of material deposition cycles.Figure 2d