公开(公告)号：SG195453A1

公开(公告)日：2013-12-30

申请号：SG2013030861

申请日：2013-04-23

Applicant: GLOBALFOUNDRIES INC

Inventor： WITOLD P MASZARA ,  AJEY P JACOB ,  NICHOLAS V LICAUSI ,  JODY A FRONHEISER ,  KEREM AKARVARDAR

Abstract: One illustrative method disclosed herein involves performing a first etching process through a patterned hard mask layer to define a plurality of spaced-apart trenches in a substrate that defines a first portion of a fin for the device, forming a layer of insulating material in the trenches and performing a planarization process on the layer of insulating material to expose the patterned hard, performing a second etching process to remove the hard mask layer and to define a cavity within the layer of insulating material, forming a second portion of the fin within the cavity, wherein the second portion of the fin is comprised of a semiconducting material that is different than the substrate, and performing a third etching process on the layer of insulating material such that an upper surface of the insulating material is below an upper surface of the second portion of the fin.

公开(公告)号：SG190521A1

公开(公告)日：2013-06-28

申请号：SG2012081873

申请日：2012-11-06

Applicant: GLOBALFOUNDRIES INC

Inventor： NICHOLAS V LICAUSI

Abstract: Disclosed herein are methods of patterning features in a structure, such as a layer of material used in forming integrated circuit devices or in a semiconducting substrate, using a multiple sidewall image transfer technique. In one example, the10 method includes forming a first mandrel above a structure, forming a plurality of first spacers adjacent the first mandrel, forming a plurality of second mandrels adjacent one of the first spacers, and forming a plurality of second spacers adjacent one of the second mandrels. The method also includes performing at least one etching process to selectively remove the first mandrel and the second mandrels relative to the first15 spacers and the second spacers and thereby define an etch mask comprised of the first spacers and the second spacer and performing at least one etching process through the etch mask on the structure to define a plurality of features in the structure. Figure 2J