公开(公告)号：SG10201402593QA

公开(公告)日：2015-02-27

申请号：SG10201402593Q

申请日：2014-05-23

Applicant: GLOBALFOUNDRIES INC

Inventor： AJEY P JACOB ,  MURAT K AKARVARDAR ,  JODY FRONHEISER ,  WITOLD P MASZARA

公开(公告)号：SG10201604931PA

公开(公告)日：2016-08-30

申请号：SG10201604931P

申请日：2014-01-21

Applicant: GLOBALFOUNDRIES INC

Inventor： JODY FRONHEISER ,  AJEY P JACOB ,  WITOLD P MASZARA ,  KEREM AKARVARDAR

公开(公告)号：SG2014004840A

公开(公告)日：2014-10-30

申请号：SG2014004840

申请日：2014-01-21

Applicant: GLOBALFOUNDRIES INC

Inventor： JODY FRONHEISER ,  AJEY P JACOB ,  WITOLD P MASZARA ,  KEREM AKARVARDAR

公开(公告)号：SG195453A1

公开(公告)日：2013-12-30

申请号：SG2013030861

申请日：2013-04-23

Applicant: GLOBALFOUNDRIES INC

Inventor： WITOLD P MASZARA ,  AJEY P JACOB ,  NICHOLAS V LICAUSI ,  JODY A FRONHEISER ,  KEREM AKARVARDAR

Abstract: One illustrative method disclosed herein involves performing a first etching process through a patterned hard mask layer to define a plurality of spaced-apart trenches in a substrate that defines a first portion of a fin for the device, forming a layer of insulating material in the trenches and performing a planarization process on the layer of insulating material to expose the patterned hard, performing a second etching process to remove the hard mask layer and to define a cavity within the layer of insulating material, forming a second portion of the fin within the cavity, wherein the second portion of the fin is comprised of a semiconducting material that is different than the substrate, and performing a third etching process on the layer of insulating material such that an upper surface of the insulating material is below an upper surface of the second portion of the fin.