公开(公告)号：SG184671A1

公开(公告)日：2012-10-30

申请号：SG2012019253

申请日：2012-03-16

Applicant: GLOBALFOUNDRIES INC ,  GLOBALFOUNDRIES DRESDEN MOD 1

Inventor： MATTHIAS LEHR ,  ANDREAS OTT ,  JORG HOHAGE

Abstract: 21When forming complex metallization systems on the basis of copper, the very last metallization layer may receive contact regions on the basis of copper, the surface of which may be passivated on the basis of a dedicated protection layer, which may thus allow the patterning of the passivation layer stack prior to shipping the device to a remote manufacturing site. Hence, the protected contact surface may efficiently be re-exposed in the remote manufacturing site on the basis of an efficient non-masked wet chemical etch process.Figure 2d

公开(公告)号：SG2013070388A

公开(公告)日：2014-09-26

申请号：SG2013070388

申请日：2013-09-18

Applicant: GLOBALFOUNDRIES INC

Inventor： TORSTEN HUISINGA ,  CARSTEN PETERS ,  ANDREAS OTT ,  AXEL PREUSSE

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a metal contact structure, an electrically conductive capping layer formed on the metal contact structure, and a conductive via electrically connected to the metal contact structure through the electrically conductive capping layer.