公开(公告)号：US09332628B2

公开(公告)日：2016-05-03

申请号：US14739703

申请日：2015-06-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel C. Edelstein ,  David V. Horak ,  Elbert E. Huang ,  Satyanarayana V. Nitta ,  Takeshi Nogami ,  Shom Ponoth ,  Terry A. Spooner

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H05K1/02 ,  H01L21/768 ,  H05K1/03

CPC classification number: H05K1/0216 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76852 ,  H05K1/0298 ,  H05K1/03 ,  H05K2201/0707 ,  H05K2201/09063

Abstract: A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.