公开(公告)号：US20230352570A1

公开(公告)日：2023-11-02

申请号：US17733118

申请日：2022-04-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. Levy ,  Sarah A. McTaggart ,  Laura J. Silverstein ,  Qizhi Liu ,  Jason E. Stephens

IPC: H01L29/732 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/45

CPC classification number: H01L29/732 ,  H01L29/66272 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/456

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar junction transistor and methods of manufacture. The structure includes: a collector region; a base region adjacent to the collector region; an emitter region adjacent to the base region; contacts having a first material connecting to the collector region and the base region; and at least one contact having a second material connecting to the emitter region.

公开(公告)号：US11043418B2

公开(公告)日：2021-06-22

申请号：US16685648

申请日：2019-11-15

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Jason E. Stephens ,  Daniel Chanemougame ,  Ruilong Xie ,  Lars W. Liebmann ,  Gregory A. Northrop

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.