公开(公告)号：EP3046872A1

公开(公告)日：2016-07-27

申请号：EP14843830.2

申请日：2014-09-08

Applicant: Griffith University

Inventor： IACOPI, Francesca ,  AHMED, Mohsin ,  CUNNING, Benjamin Vaughan

IPC: C01B31/00 ,  C01B31/04 ,  C30B1/00 ,  C30B1/02 ,  B32B9/00

CPC classification number: C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

Abstract: A process for forming graphene, including : depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals including at least one first metal and at least one second metal; and heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, and the corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

Abstract translation: 一种形成石墨烯的方法，包括：将至少第一和第二金属沉积在碳化硅（SiC）的表面上，以及在导致第一金属与硅的反应的条件下加热SiC和第一和第二金属 碳化硅以形成碳和至少一种稳定的硅化物。 碳在稳定硅化物和第二金属中的相应溶解度足够低，使得由硅化物反应产生的碳在SiC上形成石墨烯层。

公开(公告)号：WO2016141423A1

公开(公告)日：2016-09-15

申请号：PCT/AU2016/050152

申请日：2016-03-04

Applicant: GRIFFITH UNIVERSITY

Inventor： AHMED, Mohsin ,  IACOPI, Francesca

IPC: C01B31/08 ,  H01G11/32 ,  H01G11/26 ,  H01G11/34 ,  H01G11/36 ,  H01G11/86 ,  C23C16/00 ,  C23C16/26 ,  C23C16/32 ,  B32B23/00

CPC classification number: H01G11/36 ,  C01B32/184 ,  C23C14/185 ,  C23C14/5806 ,  C23C14/5873 ,  C23C16/325 ,  H01G11/26 ,  H01G11/28 ,  H01G11/68 ,  H01G11/86 ,  Y02E60/13

Abstract: A process for forming high surface area graphene structures, the process including: depositing at least one metal on a surface of silicon carbide; heating the at least one metal and the silicon carbide to cause at least one of the metals to react with a portion of the silicon carbide to form silicide regions extending into an unreacted portion of the silicon carbide and graphene disposed between the silicide regions and the unreacted portion of the silicon carbide; and removing the silicide regions to provide a silicon carbide structure having a highly irregular surface and a surface layer of graphene.

Abstract translation: 一种用于形成高表面积石墨烯结构的方法，所述方法包括：在碳化硅表面上沉积至少一种金属; 加热所述至少一种金属和所述碳化硅以使所述金属中的至少一种与所述碳化硅的一部分反应，以形成延伸到所述碳化硅的未反应部分中的硅化物区域和设置在所述硅化物区域和所述未反应的所述硅化物区域之间的石墨烯 部分碳化硅; 并且去除硅化物区域以提供具有高度不规则表面和石墨烯表面层的碳化硅结构。

公开(公告)号：WO2015035465A1

公开(公告)日：2015-03-19

申请号：PCT/AU2014/050218

申请日：2014-09-08

Applicant: GRIFFITH UNIVERSITY

Inventor： IACOPI, Francesca ,  AHMED, Mohsin ,  CUNNING, Benjamin, Vaughan

IPC: C01B31/00 ,  C01B31/04 ,  C30B1/00 ,  C30B1/02 ,  B32B9/00

CPC classification number: C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

Abstract: A process for forming graphene, including : depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals including at least one first metal and at least one second metal; and heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, and the corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

Abstract translation: 一种用于形成石墨烯的方法，包括：将至少两种金属沉积到碳化硅（SiC）的表面上，所述至少两种金属包括至少一种第一金属和至少一种第二金属; 以及在导致所述至少一种第一金属与所述碳化硅的硅反应以形成碳和至少一种稳定的硅化物的条件下加热所述SiC和所述第一和第二金属，以及所述碳在所述至少一种中的相应溶解度 稳定的硅化物和至少一个第二金属足够低，使得由硅化物反应产生的碳在SiC上形成石墨烯层。

公开(公告)号：WO2015017899A1

公开(公告)日：2015-02-12

申请号：PCT/AU2014/050171

申请日：2014-08-05

Applicant: GRIFFITH UNIVERSITY

Inventor： IACOPI, Francesca ,  IACOPI, Alan, Victor ,  NEEREJ, Mishra ,  WALKER, Glenn ,  HOLD, Leonie

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  B81C1/00531 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/165

Abstract: A silicon carbide etching process, including: forming a plasma from an HCl gas; and exposing a surface of silicon carbide to the plasma to etch the silicon carbide.

Abstract translation: 一种碳化硅蚀刻工艺，包括：从HCl气体形成等离子体; 并将碳化硅的表面暴露于等离子体以蚀刻碳化硅。