公开(公告)号：EP0150713A2

公开(公告)日：1985-08-07

申请号：EP85100075.2

申请日：1985-01-04

Applicant: GTE Laboratories Incorporated

Inventor： Ditchek, Brian M. ,  Middleton, Thomas R.

IPC: B22F3/10 ,  C22C1/04 ,  H01J61/36

CPC classification number: B22F3/1003 ,  B22F1/0003 ,  C22C14/00 ,  C22C27/04 ,  C22C32/0031 ,  C22C32/0073 ,  H01J61/363

Abstract: Boron, oxygen, or a mixture thereof, is used as a sintering aid in sintering Mo-Ti alloys. Compounds formed between these sintering aids and the Mo or Ti have thermal expansion coefficients consistent with that of alloys of Mo and Ti. An hermetic member (12) may be made using these constituents. The hermetic member (12) may be used to seal an assembly such as a high pressure sodium lamp (10).

Abstract translation: 硼，氧或其混合物用作烧结Mo-Ti合金中的烧结助剂。 在这些烧结助剂和Mo或Ti之间形成的化合物具有与Mo和Ti的合金一致的热膨胀系数。 可以使用这些成分制造密封构件。 密封构件可用于密封诸如高压钠灯的组件。

公开(公告)号：EP0271346B1

公开(公告)日：1995-05-03

申请号：EP87310889.8

申请日：1987-12-10

Applicant: GTE LABORATORIES INCORPORATED

Inventor： Ditchek, Brian M. ,  Sichel, Enid K. ,  Cogan, Adrian I. ,  Bloss III, Walter L.

IPC: H01L29/47 ,  H01L29/80

CPC classification number: H01L29/66416 ,  H01L21/24 ,  H01L21/28 ,  H01L21/28537 ,  H01L21/28581 ,  H01L29/42316 ,  H01L29/47 ,  H01L29/872

公开(公告)号：EP0271346A3

公开(公告)日：1989-11-02

申请号：EP87310889.8

申请日：1987-12-10

Applicant: GTE LABORATORIES INCORPORATED

Inventor： Ditchek, Brian M. ,  Sichel, Enid K. ,  Cogan, Adrian I. ,  Bloss III, Walter L.

IPC: H01L29/47 ,  H01L29/80

CPC classification number: H01L29/66416 ,  H01L21/24 ,  H01L21/28 ,  H01L21/28537 ,  H01L21/28581 ,  H01L29/42316 ,  H01L29/47 ,  H01L29/872

Abstract: A molten charge containing the constituents of a eutectic composition of a semiconductor material and a conductive material, for example silicon and TaSi₂, in the proportions of the eutectic composition is prepared. A composite mass is pulled from the melt, and consists of a matrix (11) of single crystal semiconductor material having an array of individual rods (12) of the conductive material disposed therein. The rods (12) form Schottky barriers with the semiconductor material (11). A body (10) is cut from the composite mass. A semiconductor device, specifically an FET, is fabricated from the body (10) by making gate contact (20) to several of the rods (12) at one end, and source (30) and drain (31) contacts to the matrix (11) of semiconductor material. Current flow in the semiconductor material of the matrix (11) between the source (30) and the drain (31) is controlled by applying biasing potential to the gate contact (20) to enlarge the depletion zones around the rods.

公开(公告)号：EP0271346A2

公开(公告)日：1988-06-15

申请号：EP87310889.8

申请日：1987-12-10

Applicant: GTE LABORATORIES INCORPORATED

Inventor： Ditchek, Brian M. ,  Sichel, Enid K. ,  Cogan, Adrian I. ,  Bloss III, Walter L.

IPC: H01L29/47 ,  H01L29/80

CPC classification number: H01L29/66416 ,  H01L21/24 ,  H01L21/28 ,  H01L21/28537 ,  H01L21/28581 ,  H01L29/42316 ,  H01L29/47 ,  H01L29/872

Abstract: A molten charge containing the constituents of a eutectic composition of a semiconductor material and a conductive material, for example silicon and TaSi₂, in the proportions of the eutectic composition is prepared. A composite mass is pulled from the melt, and consists of a matrix (11) of single crystal semiconductor material having an array of individual rods (12) of the conductive material disposed therein. The rods (12) form Schottky barriers with the semiconductor material (11). A body (10) is cut from the composite mass. A semiconductor device, specifically an FET, is fabricated from the body (10) by making gate contact (20) to several of the rods (12) at one end, and source (30) and drain (31) contacts to the matrix (11) of semiconductor material. Current flow in the semiconductor material of the matrix (11) between the source (30) and the drain (31) is controlled by applying biasing potential to the gate contact (20) to enlarge the depletion zones around the rods.

Abstract translation: 的熔融电荷包含半导体材料的共晶组合物和导电性的材料，例如硅和TaSi2的的成分，在共晶组合物的比例制备。 一种复合质量由熔液中拉出，并具有设置在其中的导电材料的单个杆（12）的阵列的单晶半导体材料的基质（11）的besteht。 杆与所述半导体材料（11）（12）形式的肖特基势垒。 的主体（10）从所述复合体切割。 一种半导体器件，具体地涉及FET从主体（10）通过使栅极接触（20），以几个杆（12）在一端，以及源极（30）和漏极（31）接触，以矩阵的（制造 半导体材料11）。 电流在源极（30）和漏极（31）之间的矩阵（11）的半导体材料流动通过施加偏压电位施加到栅极接触（20），以扩大棒周围的耗尽区来控制。

公开(公告)号：EP0150713A3

公开(公告)日：1987-09-23

申请号：EP85100075

申请日：1985-01-04

Applicant: GTE Laboratories Incorporated

Inventor： Ditchek, Brian M. ,  Middleton, Thomas R.

IPC: B22F03/10 ,  C22C01/04 ,  H01J61/36

CPC classification number: B22F3/1003 ,  B22F1/0003 ,  C22C14/00 ,  C22C27/04 ,  C22C32/0031 ,  C22C32/0073 ,  H01J61/363

Abstract: Boron, oxygen, or a mixture thereof, is used as a sintering aid in sintering Mo-Ti alloys. Compounds formed between these sintering aids and the Mo or Ti have thermal expansion coefficients consistent with that of alloys of Mo and Ti. An hermetic member (12) may be made using these constituents. The hermetic member (12) may be used to seal an assembly such as a high pressure sodium lamp (10).

Abstract translation: 硼，氧或其混合物用作烧结Mo-Ti合金中的烧结助剂。 在这些烧结助剂和Mo或Ti之间形成的化合物具有与Mo和Ti的合金一致的热膨胀系数。 可以使用这些成分制造密封构件。 密封构件可用于密封诸如高压钠灯的组件。