公开(公告)号：US08138495B2

公开(公告)日：2012-03-20

申请号：US11968399

申请日：2008-01-02

Applicant: George Patrick Watson

Inventor： George Patrick Watson

IPC: H01L29/06 ,  H01L31/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C2201/017 ,  Y10T74/1553

Abstract: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.

Abstract translation: 一种包括微机电系统的装置。 微机电系统包括其中具有位错的晶体结构元件。 对于至少约60％的相邻位错对，位错的方向向量形成小于约45度的锐角。

公开(公告)号：US08304276B2

公开(公告)日：2012-11-06

申请号：US13358615

申请日：2012-01-26

Applicant: George Patrick Watson

Inventor： George Patrick Watson

IPC: H01L21/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C2201/017 ,  Y10T74/1553

Abstract: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.

公开(公告)号：US06251546B1

公开(公告)日：2001-06-26

申请号：US09397716

申请日：1999-09-16

Applicant: Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

Inventor： Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

IPC: G03F900

CPC classification number: G03F1/32

Abstract: An improved attenuated phase-shifting mask (APSM) for use with an imaging tool for forming a patterned feature on a photoresist layer of a semiconductor wafer. The APSM has a transmissive region for substantially transmitting light therethrough to form a projected image substantially shaped as the patterned feature on the photoresist layer. The APSM also has an attenuating and phase-shifting region, contiguous with the transmissive region, for absorbing a portion of the light incident thereon and for shifting the phase of the incident light by a predetermined number of degrees relative to that of the light transmitted through the transmissive region so as to destructively interfere with the light transmitted through the transmissive region and to project a background image. The transmissive region has a dimension d dimensioned such that the intensity of the image projected by the transmissive region is darker than the intensity of the background image projected by the attenuating and phase-shifting region of the mask and that the intensity of the background image is substantially uniform.

Abstract translation: 一种与用于在半导体晶片的光致抗蚀剂层上形成图案化特征的成像工具一起使用的改进的衰减相移掩模（APSM）。 APSM具有用于基本上透射光的透射区域，以形成基本上成形为光致抗蚀剂层上的图案化特征的投影图像。 APSM还具有与透射区域相邻的衰减和相移区域，用于吸收入射到其上的光的一部分，并且将入射光的相位相对于透射的光的相位偏移预定的数量 透射区域，以便破坏性地干扰透过透射区域的光并投影背景图像。 透射区域具有维度d，其尺寸使得由透射区域投射的图像的强度比由掩模的衰减和相移区域投影的背景图像的强度更暗，并且背景图像的强度为 基本均匀。

公开(公告)号：US20120122300A1

公开(公告)日：2012-05-17

申请号：US13358615

申请日：2012-01-26

Applicant: George Patrick Watson

Inventor： George Patrick Watson

IPC: H01L21/322

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C2201/017 ,  Y10T74/1553

Abstract: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.

Abstract translation: 一种包括微机电系统的装置。 微机电系统包括其中具有位错的晶体结构元件。 对于至少约60％的相邻位错对，位错的方向向量形成小于约45度的锐角。

公开(公告)号：US06218057B1

公开(公告)日：2001-04-17

申请号：US09293103

申请日：1999-04-16

Applicant: Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

Inventor： Raymond Andrew Cirelli ,  Omkaram Nalamasu ,  Stanley Pau ,  George Patrick Watson

IPC: G03F900

CPC classification number: G03F7/0035

Abstract: A lithographic process for making an article such as a semiconductor device or a lithographic mask is disclosed. In the process, articles are fabricated by a sequence of steps in which materials are deposited on a substrate and patterned. These patterned layers are used to form devices on the semiconductor substrate. The desired pattern is formed by introducing an image of a first pattern in a layer of energy sensitive material. The image is then developed to form a first pattern. A layer of energy sensitive material is then formed over the first pattern. An image of a second pattern is then formed in the layer of energy sensitive material formed over the first pattern. The second pattern is then developed. The desired pattern is then developed from the first pattern and the second pattern.

Abstract translation: 公开了用于制造诸如半导体器件或光刻掩模的物品的光刻工艺。 在此过程中，通过一系列步骤制造制品，其中将材料沉积在衬底上并图案化。 这些图案化层用于在半导体衬底上形成器件。 通过在第一层能量敏感材料中引入第一图案的图像来形成所需的图案。 然后显影图像以形成第一图案。 然后在第一图案上形成一层能量敏感材料。 然后在形成在第一图案上的能量敏感材料层中形成第二图案的图像。 然后开发第二种模式。 然后从第一图案和第二图案展开期望的图案。

公开(公告)号：US5701014A

公开(公告)日：1997-12-23

申请号：US673705

申请日：1996-06-25

Applicant: Steven David Berger ,  James Alexander Liddle ,  George Patrick Watson

Inventor： Steven David Berger ,  James Alexander Liddle ,  George Patrick Watson

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/70308 ,  G03F7/70441 ,  G03F7/70941 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31791

Abstract: The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.

Abstract translation: 本发明涉及投影光刻的方法和装置，其中在单次曝光中有效地消除了由邻近效应引起的引入到辐射敏感材料中的对比度。 图案化的辐射通过具有至少一个透镜和后焦平面滤光片的透镜系统透射。 后焦平面滤光器具有至少两个孔，图像孔和接近效应校正孔。 图案化的辐射通过图像孔径传播并将期望的图像引入到能量敏感的抗蚀剂材料中。 反向图案辐射的一部分通过邻近效应校正孔传递到能量敏感抗蚀剂材料上，以有效地消除由邻近效应引起的对比度。

公开(公告)号：US20120038010A1

公开(公告)日：2012-02-16

申请号：US11968399

申请日：2008-01-02

Applicant: George Patrick Watson

Inventor： George Patrick Watson

IPC: H01L29/84

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C2201/017 ,  Y10T74/1553

Abstract: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.

公开(公告)号：US6015644A

公开(公告)日：2000-01-18

申请号：US190351

申请日：1998-11-12

Applicant: Raymond Andrew Cirelli ,  Masis Mkrtchyan ,  Lee Edward Trimble ,  George Patrick Watson ,  David Lee Windt

Inventor： Raymond Andrew Cirelli ,  Masis Mkrtchyan ,  Lee Edward Trimble ,  George Patrick Watson ,  David Lee Windt

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/705 ,  G03F7/70091 ,  G03F7/70191

Abstract: A process for device fabrication is disclosed. In the process, optical lithography is used to introduce an image of a desired pattern into an energy sensitive material. In the process, a filter element is provided. The filter element has at least two regions of different transmittance, each region denominated an aperture. The regions are selected by obtaining information about the desired pattern and an optical lithographic tool that will be used to introduce the image of the desired pattern into the energy sensitive resist material. A filter element that provides an image that, when developed, will provide features with dimensions within acceptable process tolerances is then designed. The filter element is designed by modeling the effects of each aperture of the filter element on the intensity profile of an image of the desired pattern. The combined effect of the apertures is then determined. If required, an aspect (transmittance, orientation, dimension) of the one or more of the proposed apertures is adjusted to provide a modeled intensity profile that more closely corresponds to the desired lithographic result. Once the aspects of all apertures is determined, the filter element is fabricated and used in the optical lithographic process by placing the filter element in the optical lithography tool.

Abstract translation: 公开了一种用于器件制造的工艺。 在该过程中，使用光学光刻技术将期望图案的图像引入到能量敏感材料中。 在该过程中，提供过滤元件。 滤光元件具有不同透射率的至少两个区域，每个区域指定孔径。 通过获得关于期望图案的信息和将用于将期望图案的图像引入能量敏感抗蚀剂材料的光学光刻工具来选择区域。 然后设计一种过滤元件，其提供在开发时将提供尺寸在可接受的工艺公差内的特征的图像。 过滤器元件通过对滤波器元件的每个孔的影响对期望图案的图像的强度分布进行建模来设计。 然后确定孔的组合效果。 如果需要，调整所提出的一个或多个孔的一个方面（透射率，取向，尺寸）以提供更接近于所需光刻结果的建模强度分布。 一旦确定了所有孔的方面，则通过将滤光元件放置在光刻工具中，在光学平版印刷工艺中制造和使用滤光元件。

公开(公告)号：US5736281A

公开(公告)日：1998-04-07

申请号：US660632

申请日：1996-06-07

Applicant: George Patrick Watson

Inventor： George Patrick Watson

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03C5/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30461 ,  H01J2237/31769 ,  Y10S430/143

Abstract: A method of compensating for proximity effects in electron beam lithography systems is disclosed. An uncorrected dose profile is obtained for the pattern features to be introduced into a layer of electron beam sensitive material, including a determination of the clearing dose for the electron beam sensitive resist and the dose height for each edge of the pattern feature. Thereafter the incident dose of exposure energy for introducing an image of the pattern into a layer of electron beam sensitive material is adjusted by designating the clearing dose for each edge of the pattern feature as a function of the dose height. The uncorrected dose profile for determining the dose height and the clearing dose is optionally obtained from a calibration step. Each feature is optionally partitioned into a plurality of subshapes and the incident dose of exposure energy is then adjusted for each edge of each subshape by designating the clearing dose for each edge of each subshape as a function of the dose height.

Abstract translation: 公开了补偿电子束光刻系统中邻近效应的方法。 对于要引入电子束敏感材料层的图案特征获得未校正的剂量分布，包括确定电子束敏感抗蚀剂的清除剂量和图案特征的每个边缘的剂量高度。 此后，通过指定作为剂量高度的函数的图案特征的每个边缘的清除剂量来调整用于将图案的图像引入电子束敏感材料层的入射剂量的曝光能量。 用于确定剂量高度和清除剂量的未校正剂量分布可选地从校准步骤获得。 每个特征可选地划分成多个子形状，然后通过指定作为剂量高度的函数的每个子像素的每个边缘的清除剂量来调整每个子像素的每个边缘的曝光能量的入射剂量。