公开(公告)号：EP4354511A2

公开(公告)日：2024-04-17

申请号：EP23195277.1

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZIERAK, Michael J. ,  BENTLEY, Steven J. ,  SHARMA, Santosh ,  LEVY, Mark D. ,  KANTAROVSKY, Johnatan A.

IPC: H01L29/41 ,  H01L29/10 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/402 ,  H01L29/1066

Abstract: A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.

公开(公告)号：EP4535429A1

公开(公告)日：2025-04-09

申请号：EP24164396.4

申请日：2024-03-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： LEVY, Mark D. ,  KANTAROVSKY, Johnatan A. ,  ZIERAK, Michael J. ,  SHARMA, Santosh ,  BENTLEY, Steven J.

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/51 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a semiconductor substrate; at least one insulator film over the semiconductor substrate, the at least one insulator film including a recess; and a field plate extending into the at least one recess and over the at least one insulator film.

公开(公告)号：EP4354511A3

公开(公告)日：2024-08-07

申请号：EP23195277.1

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZIERAK, Michael J. ,  BENTLEY, Steven J. ,  SHARMA, Santosh ,  LEVY, Mark D. ,  KANTAROVSKY, Johnatan A.

IPC: H01L29/41 ,  H01L29/778 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/402 ,  H01L29/1066

Abstract: A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.

公开(公告)号：EP4383345A1

公开(公告)日：2024-06-12

申请号：EP23206289.3

申请日：2023-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  ZIERAK, Michael J. ,  BENTLEY, Steven J. ,  LEVY, Mark D.

IPC: H01L29/40 ,  H01L29/778 ,  H01L21/337 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/2003 ,  H01L29/1066 ,  H01L29/7786 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/66462

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isolated from the gate structure and abutting the source contact and the drain contact.

公开(公告)号：EP4550422A1

公开(公告)日：2025-05-07

申请号：EP24168351.5

申请日：2024-04-04

Applicant: GlobalFoundries U.S. Inc.

Inventor： BENTLEY, Steven J. ,  SHARMA, Santosh ,  KANTAROVSKY, Johnatan A. ,  LEVY, Mark D. ,  ZIERAK, Michael J.

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/10 ,  H01L29/423

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a gate structure; a first barrier layer under and adjacent to the gate structure; and a second barrier layer over the first barrier layer and which is adjacent to the gate structure.

公开(公告)号：EP4383344A3

公开(公告)日：2024-08-21

申请号：EP23206288.5

申请日：2023-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  ZIERAK, Michael J. ,  LEVY, Mark D. ,  BENTLEY, Steven J.

IPC: H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/7783 ,  H01L29/7781 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/402

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure (19a) adjacent to a first source region (23a); a second gate structure (19b) adjacent to a second source region (23b); and field plates (22) adjacent to the first gate structure, the second gate structure and a surface of an active layer (20) of the first gate structure and the second gate structure.

公开(公告)号：EP4383344A2

公开(公告)日：2024-06-12

申请号：EP23206288.5

申请日：2023-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  ZIERAK, Michael J. ,  LEVY, Mark D. ,  BENTLEY, Steven J.

IPC: H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L29/7786 ,  H01L29/7783 ,  H01L29/7781 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure (19a) adjacent to a first source region (23a); a second gate structure (19b) adjacent to a second source region (23b); and field plates (22) adjacent to the first gate structure, the second gate structure and a surface of an active layer (20) of the first gate structure and the second gate structure.