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公开(公告)号:EP4354511A2
公开(公告)日:2024-04-17
申请号:EP23195277.1
申请日:2023-09-05
Applicant: GlobalFoundries U.S. Inc.
Inventor: ZIERAK, Michael J. , BENTLEY, Steven J. , SHARMA, Santosh , LEVY, Mark D. , KANTAROVSKY, Johnatan A.
IPC: H01L29/41 , H01L29/10 , H01L29/20 , H01L29/778
CPC classification number: H01L29/778 , H01L29/2003 , H01L29/404 , H01L29/402 , H01L29/1066
Abstract: A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.
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公开(公告)号:EP4535429A1
公开(公告)日:2025-04-09
申请号:EP24164396.4
申请日:2024-03-19
Applicant: GlobalFoundries U.S. Inc.
Inventor: LEVY, Mark D. , KANTAROVSKY, Johnatan A. , ZIERAK, Michael J. , SHARMA, Santosh , BENTLEY, Steven J.
IPC: H01L29/778 , H01L29/40 , H01L29/51 , H01L29/10
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a semiconductor substrate; at least one insulator film over the semiconductor substrate, the at least one insulator film including a recess; and a field plate extending into the at least one recess and over the at least one insulator film.
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公开(公告)号:EP4354511A3
公开(公告)日:2024-08-07
申请号:EP23195277.1
申请日:2023-09-05
Applicant: GlobalFoundries U.S. Inc.
Inventor: ZIERAK, Michael J. , BENTLEY, Steven J. , SHARMA, Santosh , LEVY, Mark D. , KANTAROVSKY, Johnatan A.
IPC: H01L29/41 , H01L29/778 , H01L29/10 , H01L29/20
CPC classification number: H01L29/778 , H01L29/2003 , H01L29/404 , H01L29/402 , H01L29/1066
Abstract: A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.
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公开(公告)号:EP4383345A1
公开(公告)日:2024-06-12
申请号:EP23206289.3
申请日:2023-10-27
Applicant: GlobalFoundries U.S. Inc.
Inventor: SHARMA, Santosh , ZIERAK, Michael J. , BENTLEY, Steven J. , LEVY, Mark D.
IPC: H01L29/40 , H01L29/778 , H01L21/337 , H01L29/20 , H01L29/417
CPC classification number: H01L29/2003 , H01L29/1066 , H01L29/7786 , H01L29/404 , H01L29/41766 , H01L29/66462
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isolated from the gate structure and abutting the source contact and the drain contact.
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公开(公告)号:EP4550422A1
公开(公告)日:2025-05-07
申请号:EP24168351.5
申请日:2024-04-04
Applicant: GlobalFoundries U.S. Inc.
Inventor: BENTLEY, Steven J. , SHARMA, Santosh , KANTAROVSKY, Johnatan A. , LEVY, Mark D. , ZIERAK, Michael J.
IPC: H01L29/778 , H01L29/40 , H01L29/10 , H01L29/423
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a gate structure; a first barrier layer under and adjacent to the gate structure; and a second barrier layer over the first barrier layer and which is adjacent to the gate structure.
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公开(公告)号:EP4383344A3
公开(公告)日:2024-08-21
申请号:EP23206288.5
申请日:2023-10-27
Applicant: GlobalFoundries U.S. Inc.
Inventor: SHARMA, Santosh , ZIERAK, Michael J. , LEVY, Mark D. , BENTLEY, Steven J.
IPC: H01L29/20 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/10 , H01L29/40
CPC classification number: H01L29/7786 , H01L29/7783 , H01L29/7781 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/402
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure (19a) adjacent to a first source region (23a); a second gate structure (19b) adjacent to a second source region (23b); and field plates (22) adjacent to the first gate structure, the second gate structure and a surface of an active layer (20) of the first gate structure and the second gate structure.
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公开(公告)号:EP4383344A2
公开(公告)日:2024-06-12
申请号:EP23206288.5
申请日:2023-10-27
Applicant: GlobalFoundries U.S. Inc.
Inventor: SHARMA, Santosh , ZIERAK, Michael J. , LEVY, Mark D. , BENTLEY, Steven J.
IPC: H01L29/20 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/10
CPC classification number: H01L29/7786 , H01L29/7783 , H01L29/7781 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66462
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure (19a) adjacent to a first source region (23a); a second gate structure (19b) adjacent to a second source region (23b); and field plates (22) adjacent to the first gate structure, the second gate structure and a surface of an active layer (20) of the first gate structure and the second gate structure.
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