公开(公告)号：EP4421878A1

公开(公告)日：2024-08-28

申请号：EP23205667.1

申请日：2023-10-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： HEBERT, Francois ,  COOPER, James A. ,  MADDI, Hema Lata Rao

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/51 ,  H01L21/336 ,  H01L29/10

CPC classification number: H01L29/0623 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7813 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/0878

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a semiconductor substrate comprising a wide bandgap semiconductor material, a gate electrode, a first gate dielectric layer disposed on the semiconductor substrate, and a second gate dielectric layer disposed between the first gate dielectric layer and the gate electrode.