公开(公告)号：EP4415051A1

公开(公告)日：2024-08-14

申请号：EP23205387.6

申请日：2023-10-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： HEBERT, Francois

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7813 ,  H01L29/66068 ,  H01L29/1608 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/0696 ,  H01L21/047

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a semiconductor substrate including a first doped region, a second doped region, a third doped region, and a trench that includes a trench bottom, a first sidewall, and a second sidewall opposite to the first sidewall. The first doped region is disposed adjacent to the first sidewall of the trench, the second doped region is disposed adjacent to the second sidewall of the trench, the third doped region is disposed adjacent to the trench bottom of the first trench, the first doped region. The third doped region connects the first doped region to the second doped region, and the first doped region, the second doped region, and the third doped region have a conductivity type. The structure further comprises a gate structure in the trench.

公开(公告)号：EP4421878A1

公开(公告)日：2024-08-28

申请号：EP23205667.1

申请日：2023-10-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： HEBERT, Francois ,  COOPER, James A. ,  MADDI, Hema Lata Rao

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/51 ,  H01L21/336 ,  H01L29/10

CPC classification number: H01L29/0623 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7813 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/0878

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a semiconductor substrate comprising a wide bandgap semiconductor material, a gate electrode, a first gate dielectric layer disposed on the semiconductor substrate, and a second gate dielectric layer disposed between the first gate dielectric layer and the gate electrode.

公开(公告)号：EP4411823A1

公开(公告)日：2024-08-07

申请号：EP23206305.7

申请日：2023-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： HEBERT, Francois

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0696 ,  H01L29/1095 ,  H01L29/7813 ,  H01L29/0623 ,  H01L29/66734 ,  H01L29/1608 ,  H01L29/66068

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a semiconductor substrate including a top surface, a doped region adjacent to the top surface, and a trench that extends through the doped region. The semiconductor substrate comprises a wide bandgap semiconductor material. The structure further comprises a gate structure including a gate conductor layer in the trench, and a dielectric layer on the top surface of the semiconductor substrate. The dielectric layer includes an opening that is aligned with the trench in the semiconductor substrate, and the dielectric layer comprises a material with a melting point that is greater than or equal to 2000°C.

公开(公告)号：EP4404270A1

公开(公告)日：2024-07-24

申请号：EP23205075.7

申请日：2023-10-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： HEBERT, Francois

IPC: H01L29/06 ,  H01L21/283 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/66037 ,  H01L29/1608 ,  H01L29/0623 ,  H01L29/66719 ,  H01L29/66734 ,  H01L21/28518

Abstract: Structures for a field-effect transistor and methods of forming such structures. The structure comprises a semiconductor substrate including a top surface, a doped region adjacent to the top surface, and a trench that extends through the doped region. The semiconductor substrate comprises a wide bandgap semiconductor material. The structure further comprises a gate structure including a gate conductor layer. The gate conductor layer has a first portion disposed above the top surface of the semiconductor substrate and a second portion disposed inside the trench below the top surface of the semiconductor substrate.