公开(公告)号：EP4365956A1

公开(公告)日：2024-05-08

申请号：EP23196430.5

申请日：2023-09-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： DUTTA, Anupam ,  KRISHNASAMY, Rajendran ,  CHOPPALLI, Vvss Satyasuresh ,  JAIN, Vibhor ,  GAUTHIER JR., Robert J.

IPC: H01L29/737 ,  H01L29/08 ,  H01L21/331

CPC classification number: H01L29/737 ,  H01L29/0821 ,  H01L29/66242

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a heterojunction bipolar transistor comprising a collector region, a base region and an emitter region; and at least one non-single-crystal semiconductor region in the collector region of the heterojunction bipolar transistor.