公开(公告)号：EP4383334A1

公开(公告)日：2024-06-12

申请号：EP23197836.2

申请日：2023-09-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Krishnasamy, Rajendran ,  Ellis-Monaghan, John J. ,  Adusumilli, Siva P. ,  Hazbun, Ramsey M.

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/028 ,  H01L31/0352

CPC classification number: H01L31/105 ,  H01L31/028 ,  H01L31/035281 ,  H01L27/1461 ,  H01L27/1446 ,  H01L27/14612

Abstract: A photodiode and a related method of manufacture are disclosed. The photodiode (100) includes a transfer gate (122) and a floating diffusion (124) adjacent to the transfer gate. In addition, the photodiode includes an upper terminal (112); an intrinsic semiconductor region (114) in contact with the upper terminal, the intrinsic semiconductor region in a trench (130) in a substrate (132) adjacent to the transfer gate; and a lower terminal (116) in contact with the intrinsic semiconductor region. An insulator layer (140) is along an entirety of a sidewall (142) of the intrinsic semiconductor region and between the intrinsic semiconductor region and the transfer gate. A p-type well (154, 156) may also optionally be between the insulator layer and the transfer gate.