公开(公告)号：EP4401137A1

公开(公告)日：2024-07-17

申请号：EP23192846.6

申请日：2023-08-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Karalkar, Sagar Premnath ,  Gebreselasie, Ephrem G. ,  Krishnasamy, Rajendran ,  Gauthier, Robert J. ,  Mitra, Souvick

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H02H9/046 ,  H01L27/0259

Abstract: The disclosure provides a structure including an n-type well over an n-type deep well and between a pair of p-type wells for electrostatic discharge (ESD) protection. The structure may include a p-type deep well over a substrate, a first n-type well over the p-type deep well, and a pair of p-type wells over the p-type deep well. The pair of p-type wells are each adjacent opposite horizontal ends of the n-type well. A pair of second n-type wells are over the p-type deep well and adjacent one of the pair of p-type wells. Each p-type well is horizontally between the first n-type well and one of the second n-type wells.

公开(公告)号：EP4391055A1

公开(公告)日：2024-06-26

申请号：EP23198265.3

申请日：2023-09-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Karalkar, Sagar Premnath ,  Gebreselasie, Ephrem ,  Krishnasamy, Rajendran ,  Gauthier, Robert J. ,  Mitra, Souvick

IPC: H01L27/02

CPC classification number: H01L27/0248

Abstract: Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a first well and a second well in the semiconductor substrate. The first and second wells have a first conductivity type. The structure further comprises a third well and a fourth well in the semiconductor substrate. The third and fourth wells have a second conductivity type, the third well includes a portion that overlaps with the first well, and the fourth well includes a portion that overlaps with the second well.