公开(公告)号：EP4481802A1

公开(公告)日：2024-12-25

申请号：EP23198961.7

申请日：2023-09-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： Tokranov, Anton ,  Gu, Man ,  Kozarsky, Eric Scott ,  Mulfinger, George ,  Yu, Hong

IPC: H01L21/84 ,  H01L27/12 ,  H01L21/762

Abstract: A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.