公开(公告)号：EP4418320A1

公开(公告)日：2024-08-21

申请号：EP23191650.3

申请日：2023-08-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pritchard, David Charles ,  Mazza, James P. ,  Jain, Navneet K. ,  Yu, Hong

IPC: H01L27/02 ,  H01L27/118 ,  H01L21/8238

CPC classification number: H01L27/0207 ,  H01L27/11807 ,  H01L2027/1186620130101 ,  H01L21/823828 ,  H01L21/823878 ,  H01L21/823871 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/088 ,  H01L27/092

Abstract: A standard cell or integrated circuit (IC) structure includes a substrate including a first active region and a second active region. A first gate electrode is over the first active region; and a second gate electrode over the second active region. A trench isolation electrically isolates the first active region and the first gate electrode from the second active region and the second gate electrode. First ends of the first active region and the first gate electrode abut a first sidewall of the trench isolation and first ends of the second active region and the second gate electrode abut a second, opposing sidewall of the trench isolation. A conductive strap extends over an upper end of the trench isolation and electrically couples the first gate electrode and the second gate electrode.

公开(公告)号：EP4243056A1

公开(公告)日：2023-09-13

申请号：EP22201123.1

申请日：2022-10-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yu, Hong ,  Holt, Judson R. ,  Jain, Vibhor

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/10 ,  H01L29/73 ,  H01L29/735

Abstract: A lateral bipolar transistor (10) on an SOI substrate (12a, 12b, 12c) comprising: a base (16) formed within the semiconductor substrate (12c); a thermal conductive material (12d') under the base and extending to an underlying semiconductor material (15); an emitter (22) on a first side of the base (16); and a collector (24) on a second side of the base (16).

公开(公告)号：EP4398701A1

公开(公告)日：2024-07-10

申请号：EP23195307.6

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pritchard, David ,  Yu, Hong ,  Zhao, Zhixing

IPC: H10N97/00

CPC classification number: H01L28/91

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a gate electrode, an isolation structure, and an electrode plate. The gate electrode is over the substrate and the isolation structure is in contact with the gate electrode. The electrode plate is in the isolation structure.

公开(公告)号：EP4181209A1

公开(公告)日：2023-05-17

申请号：EP22200481.4

申请日：2022-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yu, Hong ,  Jain, Vibhor

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/73 ,  H01L29/737 ,  H01L29/735

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor (10) with a collector contact (25) implemented as a back-side contact and methods of manufacture. The structure includes: a lateral bipolar transistor (10) which includes an emitter (20), a base (22) and a collector (18); an emitter contact (30) to the emitter; a base contact (32) to the base; and a collector contact (25) to the collector and extending to an underlying substrate (14) underneath the collector.

公开(公告)号：EP4481802A1

公开(公告)日：2024-12-25

申请号：EP23198961.7

申请日：2023-09-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： Tokranov, Anton ,  Gu, Man ,  Kozarsky, Eric Scott ,  Mulfinger, George ,  Yu, Hong

IPC: H01L21/84 ,  H01L27/12 ,  H01L21/762

Abstract: A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.

公开(公告)号：EP4210110A1

公开(公告)日：2023-07-12

申请号：EP22206418.0

申请日：2022-11-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yu, Hong ,  Derrickson, Alexander M. ,  Holt, Judson R.

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/06 ,  H01L29/66 ,  H01L29/73 ,  H01L21/8238 ,  H01L21/8222 ,  H01L21/8249

Abstract: A bipolar transistor structure comprising a semiconductor fin on a substrate, the semiconductor fin having a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction; a first emitter/collector material adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin, the first emitter/collector material having a second doping type opposite the first doping type; and
a second emitter/collector material adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin, the second emitter/collector material having the second doping type, wherein a width of the first emitter/collector material is different from a width of the second emitter/collector material.

公开(公告)号：EP4170727A1

公开(公告)日：2023-04-26

申请号：EP22197936.2

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh, Mani ,  Yu, Hong

IPC: H01L29/06 ,  H01L29/73 ,  H01L29/737 ,  H01L29/10 ,  H01L29/66 ,  H01L29/735

Abstract: A structure for a bipolar junction transistor, the structure comprising: a first terminal including a first raised semiconductor layer (36); a second terminal including a second raised semiconductor layer (34); a base layer (20) positioned laterally between the first raised semiconductor layer and the second raised semiconductor layer; and a first spacer (42) laterally positioned between the first raised semiconductor (36) layer and the base layer (20), the first spacer comprising a first dielectric material and a first airgap (44) surrounded or fully surrounded by the first dielectric material.

公开(公告)号：EP4156272A1

公开(公告)日：2023-03-29

申请号：EP22197391.0

申请日：2022-09-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani ,  Yu, Hong ,  Derrickson, Alexander

IPC: H01L27/082 ,  H01L29/732 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/84 ,  H01L27/12 ,  H01L29/737

Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first base layer (24), a second base layer (40), a first terminal (32) positioned between the first base layer and the second base layer, a second terminal (12), and a third terminal (48). The first base layer, the second base layer, and the first terminal are positioned between the second terminal and the third terminal. For example, the first terminal may be positioned in a vertical direction between the first and second base layers.