公开(公告)号：EP4250367A1

公开(公告)日：2023-09-27

申请号：EP22205711.9

申请日：2022-11-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： PENG, Jianwei ,  YU, Hong ,  GU, Man ,  KOZARSKY, Eric S.

IPC: H01L29/66 ,  H01L29/49 ,  H01L21/28

Abstract: A structure comprising, a channel region; a gate dielectric on the channel region; source and drain structures on opposite sides of the channel region; and a gate conductor on the gate dielectric, wherein the source and drain structures include source and drain silicides, respectively, wherein the gate conductor includes a gate conductor silicide, and wherein the gate conductor silicide is thicker than the source and drain silicides.

公开(公告)号：EP4235799A1

公开(公告)日：2023-08-30

申请号：EP22201778.2

申请日：2022-10-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： YU, Hong ,  PENG, Jianwei ,  JAIN, Vibhor

IPC: H01L29/66 ,  H01L29/735 ,  H01L29/737 ,  H01L29/73 ,  H01L29/10 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with self-aligned asymmetric spacer and methods of manufacture. The structure includes: a base formed on a semiconductor substrate; an asymmetrical spacer surrounding the base; an emitter on a first side of the base and separated from the base by the asymmetrical spacer; and a collector on a second side of the base and separated from the base by the asymmetrical spacer.