公开(公告)号：EP4546404A1

公开(公告)日：2025-04-30

申请号：EP24168608.8

申请日：2024-04-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： BORISOV, Kiril B. ,  ZIER, Manfred Michael ,  BACHER, Alexander S. ,  PRITCHARD, David C. ,  RAMADOUT, Benoit F. C.

IPC: H01L21/74 ,  H01L23/528 ,  H01L23/535

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to buried interconnect structures and methods of manufacture. The structure includes: a semiconductor substrate; a trench isolation structure extending into the semiconductor substrate; and at least one buried interconnect structure in the semiconductor substrate and crossing the trench isolation structure.