公开(公告)号：EP4546404A1

公开(公告)日：2025-04-30

申请号：EP24168608.8

申请日：2024-04-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： BORISOV, Kiril B. ,  ZIER, Manfred Michael ,  BACHER, Alexander S. ,  PRITCHARD, David C. ,  RAMADOUT, Benoit F. C.

IPC: H01L21/74 ,  H01L23/528 ,  H01L23/535

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to buried interconnect structures and methods of manufacture. The structure includes: a semiconductor substrate; a trench isolation structure extending into the semiconductor substrate; and at least one buried interconnect structure in the semiconductor substrate and crossing the trench isolation structure.

公开(公告)号：EP4465362A1

公开(公告)日：2024-11-20

申请号：EP24153816.4

申请日：2024-01-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： YU, Hong ,  PRITCHARD, David C. ,  JAIN, Navneet K. ,  MAZZA, James P. ,  FEUILLETTE, Romain H. A.

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to nanosheet transistor structures with tunable channels and inner sidewall spacers and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets over a semiconductor substrate; a plurality of gate structures surrounding individual nanosheets of the plurality of semiconductor nanosheets, with a lower gate structure comprising a length at least equal to a length of each remaining gate structure of the plurality of gate structures; an inner sidewall spacer adjacent each of the plurality of gate structures; and source/drain regions on opposing sides of the plurality of gate structures, separated therefrom by the inner sidewall spacer.

公开(公告)号：EP4428909A1

公开(公告)日：2024-09-11

申请号：EP24152503.9

申请日：2024-01-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZHU, Xuelian ,  JAIN, Navneet K. ,  KIM, Juhan ,  MAZZA, James P. ,  ZENG, Jia ,  PRITCHARD, David C. ,  RASHED, Mahbub

IPC: H01L21/761 ,  H01L27/06 ,  H01Q1/22 ,  H01L27/02

CPC classification number: H01L21/76224 ,  H01L21/761 ,  H01L27/0629 ,  H01Q1/2283 ,  H01L27/0255

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.