公开(公告)号：EP4325188A2

公开(公告)日：2024-02-21

申请号：EP23181591.1

申请日：2023-06-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZHAO, Zhixing ,  CHEN, Yiching ,  RESTREPO, Oscar D.

IPC: G01K7/16 ,  H01L23/34

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture. The structure includes: at least one active gate structure; and a built-in temperature sensor adjacent to and on a same device level as the at least one active gate structure, the built-in temperature sensor further includes force lines and sensing lines.

公开(公告)号：EP4398010A1

公开(公告)日：2024-07-10

申请号：EP23204241.6

申请日：2023-10-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： PAWLAK, Bartlomiej Jan ,  RESTREPO, Oscar D. ,  RAMACHANDRAN, Koushik ,  BIAN, Yusheng ,  SILVA, Eduardo Cruz

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/35

CPC classification number: G02B2006/1217620130101 ,  G02B2006/1213520130101 ,  G02B6/136 ,  G02B6/3566 ,  G02B6/3576 ,  G02B6/3596 ,  G02B6/3502 ,  G02B2006/1214520130101

Abstract: Structures including an edge coupler and methods of forming such structures. The structure comprises a dielectric layer on a semiconductor substrate. The dielectric layer includes a cavity and an edge defining a boundary of the cavity. The structure further comprises an edge coupler including a waveguide core. The waveguide core includes a portion that extends past the edge of the dielectric layer and overhangs the cavity. The structure further comprises a heater positioned adjacent to the portion of the waveguide core. The heater is spaced by a gap from the portion of the waveguide core.

公开(公告)号：EP4325188A3

公开(公告)日：2024-06-19

申请号：EP23181591.1

申请日：2023-06-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZHAO, Zhixing ,  CHEN, Yiching ,  RESTREPO, Oscar D.

IPC: G01K7/16 ,  H01L23/34

CPC classification number: G01K7/16

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture. The structure includes: at least one active gate structure; and a built-in temperature sensor adjacent to and on a same device level as the at least one active gate structure, the built-in temperature sensor further includes force lines and sensing lines.