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公开(公告)号：EP4325188A2
公开(公告)日：2024-02-21
申请号：EP23181591.1
申请日：2023-06-27
Applicant: GlobalFoundries U.S. Inc.
Inventor： ZHAO, Zhixing , CHEN, Yiching , RESTREPO, Oscar D.
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture. The structure includes: at least one active gate structure; and a built-in temperature sensor adjacent to and on a same device level as the at least one active gate structure, the built-in temperature sensor further includes force lines and sensing lines.
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公开(公告)号：EP4325188A3
公开(公告)日：2024-06-19
申请号：EP23181591.1
申请日：2023-06-27
Applicant: GlobalFoundries U.S. Inc.
Inventor： ZHAO, Zhixing , CHEN, Yiching , RESTREPO, Oscar D.
CPC classification number: G01K7/16
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture. The structure includes: at least one active gate structure; and a built-in temperature sensor adjacent to and on a same device level as the at least one active gate structure, the built-in temperature sensor further includes force lines and sensing lines.
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公开(公告)号：EP4328961A1
公开(公告)日：2024-02-28
申请号：EP23184338.4
申请日：2023-07-10
Applicant: GlobalFoundries U.S. Inc.
Inventor： ZHAO, Zhixing , CHEN, Yiching
IPC: H01L21/84 , H01L27/06 , H01L27/12 , H01L21/762 , G01K7/01
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture and operation. The structure includes: a semiconductor on insulator substrate; an insulator layer under the semiconductor on insulator substrate; a handle substrate under insulator layer; a first well of a first dopant type in the handle substrate; a second well of a second dopant type in the handle substrate, adjacent to the first well; and a back-gate diode at a juncture of the first well and the second well.
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