公开(公告)号：EP4297078A1

公开(公告)日：2023-12-27

申请号：EP22205243.3

申请日：2022-11-03

Applicant: GlobalFoundries U.S. Inc.

Inventor： He, Zhong-Xiang ,  Hazbun, Ramsey ,  Krishnasamy, Rajendran ,  Kantarovsky, Johnatan Avraham ,  Abou-Khalil, Michel ,  Rassel, Richard

IPC: H01L23/367 ,  H01L23/373 ,  H01L29/06 ,  H01L29/417 ,  H01L29/778

Abstract: A semiconductor device, comprising: a substrate; a semiconductor layer over the substrate; a device layer over the semiconductor layer, the device layer comprising a first ohmic contact and a second ohmic contact; and heat dissipating structures at least through the substrate and the semiconductor layer, wherein the heat dissipating structures are between the first ohmic contact and the second ohmic contact.