公开(公告)号：EP4210091A1

公开(公告)日：2023-07-12

申请号：EP22201489.6

申请日：2022-10-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： RANA, Uzma B. ,  SHANK, Steven M. ,  STAMPER, Anthony K.

IPC: H01L21/762 ,  H01L21/763 ,  H01L29/786 ,  H01L29/06

Abstract: An integrated circuit structure, comprising an active device over a bulk semiconductor substrate; and an isolation structure under the active device in the bulk semiconductor substrate, the isolation structure including a trench isolation adjacent the active device in the bulk semiconductor substrate, a dielectric layer laterally adjacent the trench isolation and over the active device, a porous semiconductor layer in the bulk semiconductor substrate under the dielectric layer laterally adjacent the trench isolation, and a polycrystalline isolation layer under the active device and the trench isolation, the porous semiconductor layer extending through the polycrystalline isolation layer.