公开(公告)号：EP4210091A1

公开(公告)日：2023-07-12

申请号：EP22201489.6

申请日：2022-10-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： RANA, Uzma B. ,  SHANK, Steven M. ,  STAMPER, Anthony K.

IPC: H01L21/762 ,  H01L21/763 ,  H01L29/786 ,  H01L29/06

Abstract: An integrated circuit structure, comprising an active device over a bulk semiconductor substrate; and an isolation structure under the active device in the bulk semiconductor substrate, the isolation structure including a trench isolation adjacent the active device in the bulk semiconductor substrate, a dielectric layer laterally adjacent the trench isolation and over the active device, a porous semiconductor layer in the bulk semiconductor substrate under the dielectric layer laterally adjacent the trench isolation, and a polycrystalline isolation layer under the active device and the trench isolation, the porous semiconductor layer extending through the polycrystalline isolation layer.

公开(公告)号：EP4404271A1

公开(公告)日：2024-07-24

申请号：EP23215717.2

申请日：2023-12-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： VANUKURU, Venkata Narayana Rao ,  SHANK, Steven M.

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/78 ,  H01L29/1087 ,  H01L29/0696 ,  H01L29/78654 ,  H01L27/1203 ,  H01L29/78615 ,  H01L21/84 ,  H01L29/78648

Abstract: Structures including a field-effect transistor and methods of forming a structure including a field-effect transistor are disclosed. The structure comprises a trench isolation region in a substrate, and a body contact region (28) that extends through the trench isolation region to the substrate. The structure further comprises a field-effect transistor including a gate connector (20), a first gate finger (18) that extends from the gate connector, a second gate finger (18) that extends from the gate connector, and a source/drain region (24, 26) disposed between the first gate finger and the second gate finger. The gate connector is positioned over the trench isolation region. The structure further comprises a gate contact (40) coupled to the gate connector, and a body contact (44) that penetrates through a portion of the gate connector to the body contact region (28).

公开(公告)号：EP4336545A1

公开(公告)日：2024-03-13

申请号：EP23185154.4

申请日：2023-07-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： ABOU-KHALIL, Michel ,  SHANK, Steven M. ,  MCTAGGART, Sarah ,  VALLETT, Aaron ,  KRISHNASAMY, Rajendran ,  LYDON-NUHFER, Megan

IPC: H01L21/76 ,  H01L27/04 ,  H01L29/10 ,  H01L21/762 ,  H01L21/763

Abstract: Semiconductor device structures with device isolation and methods of forming a semiconductor device structure with device isolation. The structure comprises a semiconductor substrate, a first semiconductor layer on the semiconductor substrate, a second semiconductor layer in a cavity in the first semiconductor layer, and a device structure including a doped region in the second semiconductor layer. The first semiconductor layer comprises a porous semiconductor material, and the second semiconductor layer comprises a single-crystal semiconductor material.