公开(公告)号：US20250126817A1

公开(公告)日：2025-04-17

申请号：US18380917

申请日：2023-10-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Meng Miao ,  Alain Loiseau ,  Lin Lin ,  Jing Wan ,  Wei Liang ,  Anindya Nath ,  Sagar Premnath Karalkar ,  Souvick Mitra ,  Xunyu Li ,  Mengfu Di

IPC: H01L29/747 ,  H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to silicon controlled rectifiers and methods of manufacture. The structure includes: a plurality of wells of a first conductivity type; a well of a second conductivity type which is different than the first conductivity type; an intrinsic semiconductor region between the well and the plurality of wells; and contacts within the plurality of wells.