公开(公告)号：EP4428909A1

公开(公告)日：2024-09-11

申请号：EP24152503.9

申请日：2024-01-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZHU, Xuelian ,  JAIN, Navneet K. ,  KIM, Juhan ,  MAZZA, James P. ,  ZENG, Jia ,  PRITCHARD, David C. ,  RASHED, Mahbub

IPC: H01L21/761 ,  H01L27/06 ,  H01Q1/22 ,  H01L27/02

CPC classification number: H01L21/76224 ,  H01L21/761 ,  H01L27/0629 ,  H01Q1/2283 ,  H01L27/0255

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.