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    PHOTOMULTIPLIER
    6.
    发明公开
    PHOTOMULTIPLIER 审中-公开
    FOTOVERVIELFACHER

    公开(公告)号：EP1717842A4

    公开(公告)日：2008-06-18

    申请号：EP05719154

    申请日：2005-02-16

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： KYUSHIMA HIROYUKI ,  SHIMOI HIDEKI ,  KAGEYAMA AKIHIRO ,  INOUE KEISUKE ,  ITO MASUO

    IPC: H01J43/24 ,  H01J43/12 ,  H01J43/28

    CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

    Abstract: A photomultiplier having a fine structure for realizing high multiplication efficiency. The photomultiplier comprises an enclosure the inside of which is maintained in a vacuum state. In the enclosure, a photoelectric surface for emitting photoelectrons in response to the incident light, an electron multiplying section for cascade-multiplying photoelectrons emitted from the photoelectric surface, and an anode for extracting secondary electrons produced by the electron multiplying section are provided. Especially a groove section for cascade-multiplying the photoelectrons from the photoelectric surface is formed in the electron multiplying section. On the surfaces of a pair of wall portions (311) defining the groove section, one or more projecting portions (311a) having secondary electron emitting surface are provided.

    ELECTRON TUBE
    7.
    发明公开
    ELECTRON TUBE 有权
    电子管

    公开(公告)号：EP1152448A4

    公开(公告)日：2006-04-19

    申请号：EP99901128

    申请日：1999-01-21

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： SUYAMA MOTOHIRO ,  KAGEYAMA AKIHIRO ,  MURAMATSU MASAHARU

    IPC: H01J31/26 ,  H01J31/49 ,  H01J29/44 ,  H01L27/148

    CPC classification number: H01J31/26 ,  H01J31/49 ,  H01J2231/50073

    Abstract: An electron tube (10) is mainly composed of a side tube (12), an input plate (14) having a photocathode (18), a stem (16), and a CCD device (20). The inside of the electron tube (10) is in a high vacuum state. The CCD device (20) is secured to the stem (16), with the back (B) of the CCD device (20) opposed to the photocathode (18). In the CCD device (20), on a semiconductor substrate (64) made of a semiconductor of one conductivity type are formed a buried layer (66), a barrier layer (68), an SiO2 layer (70), a storage electrode layer (72), a transfer electrode layer (74), and a barrier electrode layer (76) in respective predetermined positions. On them, a PSG film (78) is formed over the entire surface (A) to palanarize the surface of the CCD device (20). Further, on the film (78), an SiN film (106) mainly made of SiN is formed over the entire surface (A).

    PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD
    8.
    发明公开
    PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD 有权
    光电倍增管确保两HERSTELLUNGSVRFAHREN

    公开(公告)号：EP1717843A4

    公开(公告)日：2008-12-17

    申请号：EP05710248

    申请日：2005-02-16

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： KYUSHIMA HIROYUKI ,  SHIMOI HIDEKI ,  KAGEYAMA AKIHIRO ,  INOUE KEISUKE ,  ITO MASUO

    IPC: H01J43/24 ,  H01J43/12 ,  H01J43/28

    CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

    Abstract: A photomultiplier having a structure for easily realizing high detection accuracy and microfabrication and its manufacturing method are disclosed. The photomultiplier (1a) comprises an enclosure (2, 3, 4) the inside of which is maintained in a vacuum state. In the enclosure (2, 3, 4), a photoelectric surface (22) for emitting electrons in response to the incident light, an electron multiplying section (31) for cascade-multiplying electrons emitted from the photoelectric surface (22), and an anode (32) for extracting secondary electrons produced by the electron multiplying section (31) are provided. A part of the enclosure (2, 3, 4) is composed of glass substrates (20, 40) each having a flat portion. On the flat portions of the glass substrates (20, 40), the electron multiplying section (31) and the anode (32) are two-dimensionally arranged, respectively.

    ELECTRON TUBE
    9.
    发明公开
    ELECTRON TUBE 有权
    ELEKTRONENRÖHRE

    公开(公告)号：EP1154457A4

    公开(公告)日：2003-01-22

    申请号：EP99900652

    申请日：1999-01-21

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： SUYAMA MOTOHIRO ,  KAGEYAMA AKIHIRO ,  MURAMATSU MASAHARU

    IPC: H01J29/92 ,  H01J31/26 ,  H01J31/49 ,  H01J29/44 ,  H01L27/14

    CPC classification number: H01J31/26 ,  H01J29/92 ,  H01J31/49 ,  H01J2229/922 ,  H01J2231/50068

    Abstract: In an electron tube (1), a space (S) between the periphery (15b) of a semiconductor device (15) and a stem (11) is filled with an insulating resin (20). Therefore, the insulating resin (20) functions as a reinforcing member even during the assembly of the electron tube (1) under high-temperature condition, thereby preventing a bump (16) from coming off a bump connection part (19). Since the space (S) is only partly closed by the resin (20), the space between the semiconductor device (15) and the stem (11) is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part (15a) at the center of the semiconductor device (15) and the surface (C) of the stem (11), whereby air expanding at high temperature does not damage the electron incidence part (15a) of the back-incidence semiconductor device (15).

    Abstract translation: 在电子管（1）中，用绝缘树脂（20）填充半导体器件（15）的周边（15b）和芯柱（11）之间的空间（S）。 因此，即使在高温条件下组装电子管（1）期间，绝缘树脂（20）也用作加强件，从而防止凸起（16）从凸起连接部分（19）脱落。 由于空间（S）仅被树脂（20）部分地封闭，所以半导体器件（15）与芯柱（11）之间的空间确保了通风性。 也就是说，在半导体器件（15）的中心处的电子入射部分（15a）和杆（11）的表面（C）之间不形成储气器，由此在高温下膨胀的空气不会损坏电子 背入射半导体器件（15）的入射部分（15a）。

    Photomultiplier, and manufacturing method thereof
    10.
    发明专利
    Photomultiplier, and manufacturing method thereof 有权
    照相机及其制造方法

    公开(公告)号：JP2011187454A

    公开(公告)日：2011-09-22

    申请号：JP2011115234

    申请日：2011-05-23

    Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

    Inventor： KUSHIMA HIROYUKI ,  SHIMOI HIDEKI ,  KAGEYAMA AKIHIRO ,  INOUE KEISUKE ,  ITO MASUYASU

    IPC: H01J43/24 ,  H01J43/12 ,  H01J43/28

    CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

    Abstract: PROBLEM TO BE SOLVED: To provide a photomultiplier having a structure for making it possible to easily achieve high detection accuracy and fine processing, and to provide a method of manufacturing the same.
    SOLUTION: The photomultiplier 1a includes an enclosure having an inside kept in a vacuum state. In the enclosure, a photoelectric surface 22 emitting electrons in response to incident light, an electron multiplier section 31 cascade-multiplying electrons emitted from the photoelectric surface 22, and an anode 32 for taking out secondary electrons generated by the electron multiplying section 31 are provided. Part of the enclosure is composed of a glass substrate 4 having a flat part, whereas the electron multiplier section 31 and the anode 32 are each two-dimensionally arranged on the flat part of the glass substrate 4.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种具有能够容易地实现高检测精度和精细加工的结构的光电倍增管，并提供其制造方法。 解决方案：光电倍增器1a包括具有保持在真空状态的内部的外壳。 在外壳中，设置有响应于入射光发射电子的光电面22，从光电面22发射的电子级联的电子倍增部31和用于取出由电子倍增部31产生的二次电子的阳极32 。 外壳的一部分由具有平坦部分的玻璃基板4组成，而电子倍增部分31和阳极32都被二维地布置在玻璃基板4的平坦部分上。版权所有（C） 2011年，JPO＆INPIT

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