公开(公告)号：DE69723364D1

公开(公告)日：2003-08-14

申请号：DE69723364

申请日：1997-05-28

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI ,  NIIGAKI MINORU

IPC: H01J1/34 ,  H01J43/10 ,  H01L31/00 ,  H01L33/02 ,  H01L33/50

公开(公告)号：DE69807103T2

公开(公告)日：2003-01-23

申请号：DE69807103

申请日：1998-09-11

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: H01J1/34 ,  H01J40/06

公开(公告)号：DE69812971D1

公开(公告)日：2003-05-08

申请号：DE69812971

申请日：1998-07-10

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: C03C17/36 ,  C03C27/04 ,  C03C27/06 ,  C03C27/08 ,  H01L21/20 ,  C04B37/04

Abstract: After a film made of SiO2 is formed on at least a part of a bonding surface of a first glass member, a part of or the whole bonding surface being formed with a metal film, a second glass member is hot-pressed against the bonding surface at a predetermined pressure and a predetermined temperature. As the second glass member is hot-pressed by way of the SiO2 film against the bonding surface of the first member made of glass or the like having its bonding surface formed with a metal film, the two glass members are firmly bonded together, the bonding surface would be less likely to peel off, and the metal film would not be damaged.

公开(公告)号：AU9002998A

公开(公告)日：1999-04-12

申请号：AU9002998

申请日：1998-09-11

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: H01J1/34 ,  H01J40/06

公开(公告)号：DE69723364T2

公开(公告)日：2004-07-15

申请号：DE69723364

申请日：1997-05-28

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI ,  NIIGAKI MINORU

IPC: H01J1/34 ,  H01J43/10 ,  H01L31/00 ,  H01L33/02 ,  H01L33/50

公开(公告)号：AU8128398A

公开(公告)日：1999-02-16

申请号：AU8128398

申请日：1998-07-10

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: C03C17/36 ,  C03C27/04 ,  C03C27/06 ,  C03C27/08 ,  C03C27/10

Abstract: After a film made of SiO2 is formed on at least a part of a bonding surface of a first glass member, a part of or the whole bonding surface being formed with a metal film, a second glass member is hot-pressed against the bonding surface at a predetermined pressure and a predetermined temperature. As the second glass member is hot-pressed by way of the SiO2 film against the bonding surface of the first member made of glass or the like having its bonding surface formed with a metal film, the two glass members are firmly bonded together, the bonding surface would be less likely to peel off, and the metal film would not be damaged.

公开(公告)号：DE69812971T2

公开(公告)日：2003-11-06

申请号：DE69812971

申请日：1998-07-10

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: C03C17/36 ,  C03C27/04 ,  C03C27/06 ,  C03C27/08 ,  H01L21/20 ,  C04B37/04

Abstract: After a film made of SiO2 is formed on at least a part of a bonding surface of a first glass member, a part of or the whole bonding surface being formed with a metal film, a second glass member is hot-pressed against the bonding surface at a predetermined pressure and a predetermined temperature. As the second glass member is hot-pressed by way of the SiO2 film against the bonding surface of the first member made of glass or the like having its bonding surface formed with a metal film, the two glass members are firmly bonded together, the bonding surface would be less likely to peel off, and the metal film would not be damaged.

公开(公告)号：DE69807103D1

公开(公告)日：2002-09-12

申请号：DE69807103

申请日：1998-09-11

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: H01J1/34 ,  H01J40/06

公开(公告)号：AU7933398A

公开(公告)日：2000-01-10

申请号：AU7933398

申请日：1998-06-25

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: H01J1/34 ,  H01J43/08 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  G01J1/02

Abstract: A photocathode having a UV glass substrate (3) and a laminate (10) composed of a SiO2 layer (15), a GaAlN layer (17a), a Group III-V nitride semiconductor layer (18) and an AlN buffer layer (17) provided on the UV glass substrate (3) in succession. The UV glass substrate (3), which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate (3), which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer (18) where photoelectric conversion occurs.

公开(公告)号：EP1024513A4

公开(公告)日：2000-09-20

申请号：EP98941849

申请日：1998-09-11

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NIHASHI TOKUAKI

IPC: H01J1/34 ,  H01J40/06

CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J2201/3423

Abstract: A phototube (10) comprises a photocathode (30) having photoelectric surface. In a sealed enclosure (20) whose inside is vacuum, the photoelectric cathode (30) and an anode (40) are opposed to each other. Voltages are applied to them through lead pins (51 and 52). The photocathode (30) includes a metallic support plate (31) to which is secured a sapphire plate (32) on which are formed an a-AlN matching layer (33), a p-type GaN active layer (34), and a CsO surface layer (35). The active layer (34) has a dopant concentration that increases from 1 x 10 cm in the surface up to 5 x 10 cm at a depth of 100 nm. The dopant concentration only at the deepest region over a thickness of several nanometers is 1 x 10 cm . The crystallinity of the active layer (34) is improved, and the diffusion length is increased, improving the quantum efficiency and sharp-cut property.