公开(公告)号：JPS63200457A

公开(公告)日：1988-08-18

申请号：JP3289987

申请日：1987-02-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： KUSHIMA HIROYUKI ,  TOMINAGA TATSUSHI ,  KODAIRA KAZUYOSHI ,  NAKAMURA MAKOTO

IPC: H01J9/12 ,  H01J43/08

Abstract: PURPOSE:To improve photoelectric sensitivity and to obtain high uniformity irrespective of photoelectric surface positions by forming a film of a photoelectric surface formation material which is formed uniformly on a side of an incident window on a surface of a grid- shaped electrode and using this film as an evaporation source. CONSTITUTION:A grid-shaped electrode 22 is formed at a 0.59 mm pitch in the direction of its tube axis, at a 0.05 mm pitch in the direction of its axis, and with a line width of 0.05 mm. Vacuum evaporation of a Sb film 21 as a photoelectric surface formation material is uniformly performed on an incident window side of this grid-shaped electrode 22. The Sb film is heated by a high frequency heating device 23 which is disposed outside a cylindrical glass hermetic container 1, and this film is evaporated on an inner surface of an incident window 2 so as to be formed into a photoelectric surface 3. Since the distance from a Sb evaporation source on the surface of the grid shaped electrode to the inner wall of the incident window is then made approximately equal at respective portions, the thickness of Sb evaporated on the inner wall of the incident window can be made uniform. Hence, evaporation film thickness of the photoelectric surface formation material can be made uniform without irregularity on the inner wall of the incident window, so that uniformity of photoelectric surface sensitivity can be improved.