公开(公告)号：JP2014060424A

公开(公告)日：2014-04-03

申请号：JP2013231349

申请日：2013-11-07

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： SUZUKI HISANORI ,  YONEDA YASUTO ,  MURAMATSU MASAHARU ,  YAMAMOTO AKINAGA

IPC: H01L27/148 ,  H04N5/357 ,  H04N5/372

Abstract: PROBLEM TO BE SOLVED: To provide a back-illuminated solid-state image sensor which is capable of improving image quality by suppressing image deterioration due to an etalon phenomenon.SOLUTION: The back-illuminated solid-state image sensor includes a semiconductor substrate 4 having a light incident surface on the back side and a plurality of charge transfer electrodes 2 provided on a light detection surface opposite to the light incident surface of the semiconductor substrate 4. A plurality of openings OP for light transmission are formed between adjacent charge transfer electrodes 2. The openings OP are arranged in a staggered manner along a charge transfer direction.

Abstract translation: 要解决的问题：提供一种能够通过抑制由于标准具现象导致的图像劣化来提高图像质量的背照式固态图像传感器。解决方案：背照式固态图像传感器包括：半导体基板4，具有 背面侧的光入射面以及设置在与半导体基板4的光入射面相反的光检测面上的多个电荷转移电极2.在相邻的电荷转移电极2之间形成多个用于透光的开口OP 开口OP沿着电荷转移方向以交错方式排列。

公开(公告)号：JP2013093609A

公开(公告)日：2013-05-16

申请号：JP2013006066

申请日：2013-01-17

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： SAKAMOTO AKIRA ,  IIDA TAKASHI ,  YAMAMOTO AKINAGA ,  YAMAMURA KAZUHISA ,  NAGANO TERUMASA

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photodetection element using silicon and having spectral sensitivity characteristics sufficient for the near-infrared wavelength band.SOLUTION: A photodiode PD3 includes an n-type semiconductor substrate 1, and is back-illuminated type. The n-type semiconductor substrate 1 has a first principal surface 1a and a second principal surface 1b facing each other, and a P-type semiconductor region 3 is formed on the first principal surface 1a side. Irregular protrusions and recesses 10 are formed in at least a region facing the P-type semiconductor region 3 in the second principal surface 1b of the n-type semiconductor substrate 1. On the second principal surface 1b of the n-type semiconductor substrate 1, an accumulation layer 11 having an impurity concentration higher than that of the n-type semiconductor substrate 1 is formed. The region in the second principal surface 1b of the n-type semiconductor substrate 1 where the irregular protrusions and recesses 10 are formed is exposed optically.

Abstract translation: 要解决的问题：提供使用硅的半导体光电检测元件，并具有足够的近红外波长带的光谱灵敏度特性。 解决方案：光电二极管PD3包括n型半导体衬底1，并且是背照式的。 n - 型半导体衬底1具有彼此面对的第一主表面1a和第二主表面1b，并且P + SP>型半导体区域3形成在第一主表面1a侧。 在n 的第二主表面1b中的至少一个面对P + 型半导体区域3的区域中形成不规则的突起和凹陷部分10。 - 型半导体衬底1.在n - / SP>型半导体衬底1的第二主表面1b上，具有高于其的杂质浓度的积聚层11。 形成n

公开(公告)号：JP2010232494A

公开(公告)日：2010-10-14

申请号：JP2009079556

申请日：2009-03-27

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： SUZUKI HISANORI ,  YONEDA YASUTO ,  MIYAZAKI YASUTO ,  MURAMATSU MASAHARU ,  YAMAMOTO AKINAGA

IPC: H01L27/148 ,  H01L27/14 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372

CPC classification number: H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14806 ,  H01L31/02363 ,  H01L31/035281

Abstract: PROBLEM TO BE SOLVED: To provide a back-illuminated solid-state image sensor capable of improving image quality by suppressing image deterioration due to an etalon phenomena. SOLUTION: The back-illuminated solid-state image sensor includes a semiconductor substrate 4 including a light incidence surface at backside, and a charge transfer electrode 2 provided on a light detection surface at a side opposite to the light incidence surface of the semiconductor substrate 4. In the back-illuminated solid-state image sensor, the light detection surface includes an uneven surface, allows light reflected on the uneven surface to have a dispersed phase difference to the phase of incident light, and mutually cancels interference light to suppress the etalon phenomenon, thereby acquiring a high quality image by the back-illuminated solid-state image sensor. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够通过抑制由于标准具现象导致的图像劣化来提高图像质量的背照式固态图像传感器。 解决方案：背照式固态图像传感器包括：在背面包括光入射表面的半导体衬底4和设置在光检测表面上的与光入射表面相反的一侧的电荷转移电极2 在背照式固态图像传感器中，光检测面包括不平坦表面，允许在不平坦表面上反射的光与入射光的相位具有分散的相位差，并且将干涉光相互抵消 抑制标准具现象，从而通过背照式固态图像传感器获得高质量图像。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010093078A

公开(公告)日：2010-04-22

申请号：JP2008262104

申请日：2008-10-08

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMOTO AKINAGA ,  KAWADA YOICHI ,  OISHI SHINGO ,  MORIGUCHI TOSHIHARU ,  SAKAMOTO SHIGERU ,  ITO HARUYASU ,  FUJIMOTO MASATOSHI ,  TAKAHASHI HIRONORI ,  FUKUMITSU KENJI ,  SHIBAYAMA KATSUMI ,  AOSHIMA SHINICHIRO

IPC: H01S3/10 ,  G02B5/04 ,  G02B5/08 ,  G02B5/18

CPC classification number: G02B17/004 ,  G02B27/0944 ,  G02B27/0977 ,  H01S3/005

Abstract: PROBLEM TO BE SOLVED: To provide an optical element that can compensate wavelength dispersion of laser beam easier than before. SOLUTION: The optical element 20A is made of a medium having optical transparency, and includes a larger refractive index than air and propagates incident laser beam inside while reflecting it with a wall surface 20a a plurality of times. The optical element includes an incident window 21 disposed at part of the wall surface 20a for making laser beam incident, a projection window 22 disposed at part of the wall surface 20a for projecting the laser beam propagated inside, and wavelength dispersion compensating means 31 and 32 disposed integrally at part of the medium for transmitting or reflecting the laser beam at least twice to compensate wavelength dispersion. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供可以比以前更容易地补偿激光束的波长色散的光学元件。 解决方案：光学元件20A由具有光学透明度的介质制成，并且包括比空气更大的折射率，并将入射激光束传播到内部，同时用壁表面20a多次反射。 光学元件包括设置在用于激光束入射的壁面20a的一部分处的入射窗21，设置在壁面20a的一部分处的投影窗口22，用于投射在内部传播的激光束，以及波长色散补偿装置31和32 一体地设置在用于传输或反射激光束的介质的一部分上至少两次以补偿波长色散。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2000196063A

公开(公告)日：2000-07-14

申请号：JP37362698

申请日：1998-12-28

Applicant: HAMAMATSU PHOTONICS KK

Inventor： AKAHORI HIROSHI ,  SUZUKI HISANORI ,  MIYAGUCHI KAZUHISA ,  MURAMATSU MASAHARU ,  YAMAMOTO AKINAGA

IPC: G01T1/24 ,  H01L27/148 ,  H01L29/768 ,  H01L31/00 ,  H04N3/14

Abstract: PROBLEM TO BE SOLVED: To provide a rear irradiation semiconductor energy detector which can transfer charges at high speed and with high efficiency. SOLUTION: Aluminum wiring patterns of low resistance, which have auxiliary wiring (101-103, etc.), in zigzag patterns to help to supply transfer voltage to transfer electrodes, having an applied transfer voltage, and additional wiring (111, 112, 122, and 123, etc.), for the auxiliary supply of transfer voltage, independent of the auxiliary wiring, are made on the surface side of the transfer electrodes of the vertical shift registors of CCD made on the surface side of a substrate, and they are severally connected to corresponding transfer electrodes. Hereby, the charge transfer of at high speed and with high efficiency can be materialized by solving the problem of the wiring resistance in the transfer electrodes made of polycrystalline silicon. Moreover, it becomes possible to enlarge the width of the wiring to more than the width of a pixel with such a wiring pattern.

公开(公告)号：JPH10125888A

公开(公告)日：1998-05-15

申请号：JP28079396

申请日：1996-10-23

Applicant: HAMAMATSU PHOTONICS KK

Inventor： AKAHORI HIROSHI ,  MURAMATSU MASAHARU ,  YAMAMOTO AKINAGA

IPC: G01J3/36 ,  G01J1/02 ,  H01L27/14 ,  H01L27/148

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor energy detector which corrects wavelength-dependent output characteristics by a simple forming method of high yield, and has a high sensitivity over the whole wavelength region. SOLUTION: In a rear incidence type CCD, a full frame transfer type CCD 5 is formed on one surface of a P-type silicon substrate 1, and the other surface is made a light receiving surface. An aluminum film 32 for rear potential which has an incidence window 31 for transmitting a light is deposited on the light receiving surface. The incidence window 31 has an almost trapezoidal form wherein the side for detecting a light in the ultraviolet region is wide, and the side for detecting a light in the near infra-red region is narrow. Thereby the amount of light reaching the light receiving part is adjusted, and spectral sensitivity characteristics of a detector are corrected. By applying a voltage to the aluminum film 32, the potential of the light receiving surface is stabilized, so that measurement of low noise is enabled at a high S/N ratio. Further change of process is little and introduction is easy.

公开(公告)号：JPH0738138A

公开(公告)日：1995-02-07

申请号：JP17951993

申请日：1993-07-21

Applicant: NIPPON SHEET GLASS CO LTD ,  HAMAMATSU PHOTONICS KK

Inventor： OYOSHI KEIJI ,  KUSUDA YUKIHISA ,  TANAKA SHUHEI ,  YAMAMOTO AKINAGA

IPC: H01L21/31 ,  H01L31/10

Abstract: PURPOSE:To enable an ultraviolet sensor to be lessened in sensitivity to unnecessary ray which is of certain wavelengths and absorbed in an Si substrate, enhanced in sensitivity to ultraviolet ray, and lessened in sensitivity to visible ray to infrared ray by a method wherein a conductive film is provided between an amorphous semiconductor junction diode and a semiconductor substrate. CONSTITUTION:An ITO film 2 is formed on a single crystal Si substrate 1 as a transparent conductive film, and an N-type a-SiC: H film 3, an intrinsic a-SiC: H film 4, and a P-type a-SiC: H film 5 are successively formed for the formation of an amorphous semiconductor diode. Then, an ITO film 6 is formed as a transparent conductive film. The ITO film 2 is large in optical gap and transmissive to visible to infrared ray transmitted through an amorphous semiconductor layer to produce photocarriers inside the semiconductor substrate 1. The ITO film 2 serves to prevent photocarriers from being reflected to an amorphous semiconductor junction so as not to make photocarriers detected as a photocurrent. By this setup, an ultraviolet sensor of this constitution can be enhanced in optical sensitivity to ultraviolet ray.

公开(公告)号：JPH0644640B2

公开(公告)日：1994-06-08

申请号：JP27367487

申请日：1987-10-29

Applicant: HAMAMATSU PHOTONICS KK

Inventor： YAMAMOTO AKINAGA ,  TANAKA HITOSHI ,  SAKAKIBARA MASAYUKI

IPC: H01L31/0248 ,  G02B7/32 ,  H01L31/08 ,  H01L31/16

公开(公告)号：JPH0570946B2

公开(公告)日：1993-10-06

申请号：JP26379784

申请日：1984-12-14

Applicant: HAMAMATSU PHOTONICS KK

Inventor： YAMAMOTO AKINAGA ,  TAKIMOTO SADAJI

IPC: H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L27/146

公开(公告)号：JPH0391968A

公开(公告)日：1991-04-17

申请号：JP22959089

申请日：1989-09-05

Applicant: HAMAMATSU PHOTONICS KK

Inventor： YAMAMOTO AKINAGA ,  TAKIMOTO SADAJI

IPC: H01L31/10

Abstract: PURPOSE:To lessen a trapping level near a photodetective face by a method wherein a thermal oxide film is formed on a silicon substrate, which is etched to form an injection protective film, and a doping process is carried out through the intermediary of the protective film concerned. CONSTITUTION:A thermal oxide film 2 is formed on a P-type silicon substrate 1, a polysilicon film 3 is formed thereon, and the polysilicon film 3 is patterned through a photolithography technique to form a polysilicon mask 31 provided with an opening. Then, the exposed part of the thermal oxide film 2 is etched through the intermediary of the polysilicon 31 until it becomes as thin as tOX, which is made to serve as an injection protective mask 21, and arsenic ions are implanted through the intermediary of the implantation protective film 21 using the polysilicon mask 31 as an implantation mask. An N-type injection layer 5 formed in the P-type silicon substrate as a photodetective section 4 is set as thick as a required thickness of x1 by the control of the implantation energy. By this setup, the interface between the silicon substrate 1 and the implantation protective film 21 is fully shielded from a pollution source and the like, so that a trapping level can be restrained near the surface of a photodiode of this design.