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    HIGH Q VERTICAL RIBBON INDUCTOR ON SEMICONDUCTING SUBSTRATE
    1.
    发明申请
    HIGH Q VERTICAL RIBBON INDUCTOR ON SEMICONDUCTING SUBSTRATE 审中-公开
    半导体衬底上的高Q垂直电感电感器

    公开(公告)号：WO2011146789A1

    公开(公告)日：2011-11-24

    申请号：PCT/US2011/037263

    申请日：2011-05-20

    Applicant: HARRIS CORPORATION

    Inventor： SMITH, David M.

    IPC: H01L23/522

    CPC classification number: H01L23/5227 ,  H01L2924/0002 ,  Y10T29/49071 ,  H01L2924/00

    Abstract: A method of making a semiconductor device and devices thereof are provided. The semiconductor device (100) includes a semiconductor substrate (102) having opposing first and second surfaces (102a, 102b). The device further includes a planar inductor element (104) disposed on said first surface. The planar inductive element (103) comprises a freestanding electrical conductor extending along a meandering path and defining a plurality of windings (104), where the electrical conductor has a width and a height, and where a height-to-width (HW) ratio is substantially greater than 1.

    Abstract translation: 提供制造半导体器件的方法及其装置。 半导体器件（100）包括具有相对的第一和第二表面（102a，102b）的半导体衬底（102）。 该装置还包括设置在所述第一表面上的平面电感器元件（104）。 平面感应元件（103）包括沿曲折路径延伸并限定多个绕组（104）的独立电导体，其中电导体具有宽度和高度，并且其中高度 - 宽度（HW）比 大于1。

    METHOD FOR MAKING ELECTRICAL STRUCTURE WITH AIR DIELECTRIC AND RELATED ELECTRICAL STRUCTURES
    3.
    发明申请
    METHOD FOR MAKING ELECTRICAL STRUCTURE WITH AIR DIELECTRIC AND RELATED ELECTRICAL STRUCTURES 审中-公开
    用于制造具有空气介质和相关电气结构的电气结构的方法

    公开(公告)号：WO2013052418A1

    公开(公告)日：2013-04-11

    申请号：PCT/US2012/058299

    申请日：2012-10-01

    Applicant: HARRIS CORPORATION

    Inventor： WEATHERSPOON, Michael Raymond ,  RENDEK, Louis Joseph, Jr. ,  SHACKLETTE, Lawrence Wayne ,  MALONEY, Robert Patrick ,  SMITH, David M.

    IPC: H01L21/48 ,  H01L23/498 ,  H01L23/66 ,  H01P11/00

    CPC classification number: H01P3/121 ,  H01L21/4846 ,  H01L23/498 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H05K3/4614 ,  H05K3/4697 ,  H05K2201/0141 ,  H05K2203/016 ,  H05K2203/308 ,  H01L2924/00

    Abstract: A method has been described for making an electrical structure having an air dielectric and includes forming a first subunit including a sacrificial substrate, an electrically conductive layer including a first metal on the sacrificial substrate, and a sacrificial dielectric layer on the sacrificial substrate and the electrically conductive layer. The method further includes forming a second subunit including a dielectric layer and an electrically conductive layer thereon including the first metal, and coating a second metal onto the first metal of one or more of the first and second subunits. The method also includes aligning the first and second subunits together, heating and pressing the aligned first and second subunits to form an intermetallic compound of the first and second metals bonding adjacent metal portions together, and removing the sacrificial substrate and sacrificial dielectric layer to thereby form the electrical structure having the air dielectric.

    Abstract translation: 已经描述了一种用于制造具有空气电介质的电结构的方法，并且包括形成包括牺牲衬底的第一子单元，在牺牲衬底上包括第一金属的导电层和牺牲衬底上的牺牲电介质层， 导电层。 该方法还包括在其上形成包括电介质层和导电层的第二子单元，其上包括第一金属，并将第二金属涂覆到第一和第二子单元中的一个或多个的第一金属上。 该方法还包括将第一和第二子单元对齐在一起，加热和压缩对准的第一和第二子单元以形成将相邻金属部分粘合在一起的第一和第二金属的金属间化合物，以及去除牺牲基底和牺牲介电层从而形成 电气结构具有空气电介质。

    HIGH Q VERTICAL RIBBON INDUCTOR ON SEMICONDUCTING SUBSTRATE
    4.
    发明公开
    HIGH Q VERTICAL RIBBON INDUCTOR ON SEMICONDUCTING SUBSTRATE 有权
    垂直BANDINDUKTOR高Q：在半导体衬底

    公开(公告)号：EP2572377A1

    公开(公告)日：2013-03-27

    申请号：EP11721973.3

    申请日：2011-05-20

    Applicant: Harris Corporation

    Inventor： SMITH, David M.

    IPC: H01L23/522

    CPC classification number: H01L23/5227 ,  H01L2924/0002 ,  Y10T29/49071 ,  H01L2924/00

    Abstract: A method of making a semiconductor device and devices thereof are provided. The semiconductor device (100) includes a semiconductor substrate (102) having opposing first and second surfaces (102a, 102b). The device further includes a planar inductor element (104) disposed on said first surface. The planar inductive element (103) comprises a freestanding electrical conductor extending along a meandering path and defining a plurality of windings (104), where the electrical conductor has a width and a height, and where a height-to-width (HW) ratio is substantially greater than 1.

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