公开(公告)号：WO2004077503A3

公开(公告)日：2005-03-31

申请号：PCT/US2004002502

申请日：2004-01-29

Applicant: HARVARD COLLEGE

Inventor： GOLOVCHENKO JENE A ,  SCHURMANN GREGOR M ,  KING GAVIN M ,  BRANTON DANIEL

IPC: B81B1/00 ,  B81C99/00 ,  H01L20060101 ,  H01L21/66

CPC classification number: G01N33/48721 ,  B81C1/00087 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L22/14 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.

Abstract translation: 一种用于控制具有间隙的导电固态结构中的间隙的方法。 该结构暴露于制造工艺环境条件，其条件被选择以改变间隙的程度。 在将结构暴露于工艺环境中时，跨越间隙施加电压偏置。 在工艺环境暴露期间测量跨越间隙的电子隧道电流，并且基于隧道电流测量在工艺环境暴露期间控制工艺环境。 一种用于控制设置在支撑结构上的导电电极之间的间隙的方法。 每个电极具有通过间隙与其它电极尖端分离的电极头。 电极暴露于离子通量，导致电极的材料传输到相应的电极尖端，将电极的材料局部地添加到间隙中的电极尖端。

公开(公告)号：WO2006063098A8

公开(公告)日：2007-07-12

申请号：PCT/US2005044348

申请日：2005-12-08

Applicant: HARVARD COLLEGE

Inventor： BRANTON DANIEL ,  GOLOVCHENKO JENE A ,  KING GAVIN M ,  MOBERLYCHAN WARREN J ,  SCHURMANN GREGOR M

IPC: H01L21/033 ,  B81C1/00 ,  G03F7/20

CPC classification number: C23C14/5873 ,  B82Y10/00 ,  C23C14/541 ,  H01L21/0331 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/888 ,  Y10S977/89 ,  Y10S977/891

Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.

Abstract translation: 本发明提供了一种在结构上形成图案化材料层的方法，其通过将蒸气冷凝在结构表面上的固体冷凝物层，然后通过将所选择的能量束引导到所选择的一个 区域，在所选择的区域暴露结构。 然后将材料层沉积在固体冷凝物层的顶部和所选区域处的暴露结构。 然后，将固体冷凝物层和沉积在固体冷凝物层上的材料层的区域去除，在结构上留下图案化的材料层。