公开(公告)号：KR20180021392A

公开(公告)日：2018-03-02

申请号：KR20187004065

申请日：2016-07-12

Applicant: HONEYWELL INT INC

Inventor： FERRASSE STEPHANE ,  ALFORD FRANK C ,  STROTHERS SUSAN D

IPC: C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3435 ,  C23C14/3407 ,  C23C14/3414

Abstract: 본개시내용은, 제 1 금속물질을용해시키는단계; 제 1 금속물질에등통로각압출을가하는단계; 및제 1 금속물질을에이징시키는단계를포함하는, 스퍼터링표적과함께사용하기위한고강도백킹플레이트를형성하는방법을포함한다.

Abstract translation: 本公开提供了一种制造半导体器件的方法，包括：溶解第一金属材料; 使第一金属材料经受等通道角挤压; 老化金属材料以形成与溅射靶一起使用的高强度背板。

公开(公告)号：WO2004011691B1

公开(公告)日：2004-04-22

申请号：PCT/US0322080

申请日：2003-07-14

Applicant: HONEYWELL INT INC

Inventor： SEGAL VLADIMIR ,  WUWEN YI ,  FERRASSE STEPHANE ,  WU CHI TSE ,  STROTHERS SUSAN D ,  ALFORD FRANK A ,  WILLETT WILLIAM B

IPC: B21J5/00 ,  B21C23/01 ,  C22C9/01 ,  C22C9/02 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22F1/00 ,  C22F1/08 ,  C23C14/34 ,  H01L21/285

CPC classification number: B21C23/01 ,  B21C23/001 ,  C22F1/08 ,  C23C14/3414 ,  Y10T428/12118

Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Abstract translation: 本发明包括一种含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，其平均粒度为1微米至50微米。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括铜合金整体和结合的溅射靶，其基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶材具有小于1微米至50微米的平均粒度，并且在整个靶材中具有小于约15％标准偏差（1-sigma）的晶粒尺寸不均匀性。 本发明还包括生产粘结和整体铜和铜合金靶的方法。

公开(公告)号：WO0173156A3

公开(公告)日：2002-02-21

申请号：PCT/US0109813

申请日：2001-03-27

Applicant: HONEYWELL INT INC

Inventor： SEGAL VLADIMIR M ,  LI JIANXING ,  ALFORD FRANK ,  FERRASSE STEPHANE

IPC: B21C23/00 ,  C22C21/00 ,  C22F1/00 ,  C22F1/04 ,  C23C14/34 ,  C23C14/14

CPC classification number: C23C14/3414 ,  C22F1/04 ,  Y10S72/70

Abstract: The invention includes a method of forming an aluminum-comprising physical vapor deposition target. An aluminum-comprising mass is deformed by equal channel angular extrusion. The mass is at least 99.99 % aluminum and further comprises less than or equal to about 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr. After the aluminum-comprising mass is deformed, the mass is shaped into at least a portion of a sputtering target. The invention also encompasses a physical vapor deposition target consisting essentially of aluminum and less than or equal to 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sm, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr. Additionally, the invention encompasses thin films.

Abstract translation: 本发明包括形成含铝的物理气相沉积靶的方法。 含铝材料通过等通道角挤压变形。 质量为至少99.99％的铝，并且还包含小于或等于约1,000ppm的一种或多种掺杂剂材料，其包含选自由Ac，Ag，As，B，Ba，Be，Bi，C，Ca ，Cd，Ce，Co，Cr，Cu，Dy，Er，Eu，Fe，Ga，Gd，Ge，Hf，Ho，In，Ir，La，Lu，Mg，Mn，Mo，N，Nb，Nd，Ni ，O，Os，P，Pb，Pd，Pm，Po，Pr，Pt，Pu，Ra，Rf，Rh，Ru，S，Sb，Sc，Se，Si，Sm，Sn，Sr，Ta，Tb，Te ，Ti，Tl，Tm，V，W，Y，Yb，Zn和Zr。 在包含铝的物质变形之后，将质量成形为溅射靶的至少一部分。 本发明还包括基本上由铝组成并且小于或等于1,000ppm的一种或多种掺杂剂材料的物理气相沉积靶，其包含选自由Ac，Ag，As，B，Ba，Be，Bi，C ，Ca，Cd，Ce，Co，Cr，Cu，Dy，Er，Eu，Fe，Ga，Gd，Ge，Hf，Ho，In，Ir，La，Lu，Mg，Mn，Mo，N，Nb，Nd ，Ni，O，Os，P，Pb，Pd，Pm，Po，Pr，Pt，Pu，Ra，Rf，Rh，Ru，S，Sb，Sc，Se，Si，Sm，Sn，Sm，Sr，Ta ，Tb，Te，Ti，Tl，Tm，V，W，Y，Yb，Zn和Zr。 另外，本发明包括薄膜。

公开(公告)号：WO2005094280A2

公开(公告)日：2005-10-13

申请号：PCT/US2005010111

申请日：2005-03-24

Applicant: HONEYWELL INT INC ,  FERRASSE STEPHANE ,  ALFORD FRANK

Inventor： FERRASSE STEPHANE ,  ALFORD FRANK

IPC: B23K20/12 ,  C22C9/00 ,  C22C9/02 ,  C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  B23K20/122 ,  B23K20/129 ,  C22C9/00 ,  C22C9/02 ,  C22C21/00 ,  C22F1/04 ,  C22F1/08 ,  H01J37/3408 ,  H01J37/3435 ,  H01J37/3491

Abstract: The invention includes backing plates having grain sizes of less than 10 microns and yield strengths of at least 30 ksi. The invention includes methods of producing backing plates by hot-forging, severe plastic deformation utilizing equal channel angular extrusion, and post-deformation processing utilizing at least one of rolling and forging. The backing plates have grain sizes of less than 10 microns and yield strengths of at least 30 ksi. The invention includes a target assembly including a target having a grain size of less than about 10 microns joined to a backing plate having a grain size of less than about 10 microns with a bond strength of at least 10 ksi. The invention includes methods of forming a target assembly by joining a target and a backing plate having an average grain size of less than about 10 microns and a yield strength of at least 30 ksi.

Abstract translation: 本发明包括具有小于10微米的晶粒尺寸和至少30ksi的屈服强度的背板。 本发明包括通过热锻生产制造背板的方法，使用相等通道角挤压的严重塑性变形，以及利用轧制和锻造中的至少一种进行后变形处理。 背板具有小于10微米的晶粒尺寸和至少30ksi的屈服强度。 本发明包括目标组件，其包括具有小于约10微米的粒度的目标组件，所述靶材具有小于约10微米的结合强度至少为10ksi的粒度小于约10微米的背板。 本发明包括通过连接靶材和具有小于约10微米的平均粒度和至少30ksi的屈服强度的背板来形成靶组件的方法。

公开(公告)号：WO2007130903A3

公开(公告)日：2008-07-10

申请号：PCT/US2007067763

申请日：2007-04-30

Applicant: HONEYWELL INT INC ,  KARDOKUS JANINE K ,  STROTHERS SUSAN D ,  WOODWARD SALLY A ,  FERRASSE STEPHANE

Inventor： KARDOKUS JANINE K ,  STROTHERS SUSAN D ,  WOODWARD SALLY A ,  FERRASSE STEPHANE

IPC: C23C14/34

CPC classification number: C23C14/3414

Abstract: The invention includes methods of forming hollow cathode magnetron sputtering targets. A metallic material is processed to produce an average grain size of less than or equal to about 30 microns and subsequently subjected to deep drawing. The invention includes three-dimensional sputtering targets comprising materials containing at least one element selected from Cu, Ti, and Ta. The target has an average grain size of from about 0.2 microns to about 30 microns throughout the target and a grain size standard deviation of less than or equal to 15% (1-s). The invention includes three-dimensional targets comprising A1, having an average grain size of from 0.2 microns to less than 150 micron, with a grain size standard deviation of less than or equal to 15% (1- s).

Abstract translation: 本发明包括形成空心阴极磁控溅射靶的方法。 处理金属材料以产生小于或等于约30微米的平均粒度，随后进行深冲。 本发明包括三维溅射靶，其包含含有选自Cu，Ti和Ta中的至少一种元素的材料。 目标物在整个目标物中的平均粒度为约0.2微米至约30微米，粒度标准偏差小于或等于15％（1-s）。 本发明包括平均粒度为0.2微米至小于150微米的包含A1的三维靶，其粒度标准偏差小于或等于15％（1-s）。

公开(公告)号：WO0236847A3

公开(公告)日：2003-02-13

申请号：PCT/US0151010

申请日：2001-10-25

Applicant: HONEYWELL INT INC

Inventor： SEGAL VLADIMIR ,  FERRASSE STEPHANE ,  ALFORD FRANK

IPC: C22F1/04 ,  C22C21/12 ,  C22F1/00 ,  C22F1/08 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285

CPC classification number: C23C14/3414 ,  B21C23/001 ,  B21J1/025 ,  C22F1/00

Abstract: The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.

Abstract translation: 本发明包括由面心立方晶胞金属或合金组成并具有小于30微米，优选小于1微米的均匀晶粒尺寸的物理气相沉积靶; 和均匀的轴向或平面<220>纹理。 还描述了制造溅射靶的方法。 该方法可以包括坯料制备; 具有规定路线和通行数的等通道角挤压; 并在等通道角挤压之后进行交叉轧制或锻造。

公开(公告)号：WO0194660A3

公开(公告)日：2002-05-30

申请号：PCT/US0117798

申请日：2001-05-31

Applicant: HONEYWELL INT INC ,  SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

Inventor： SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

IPC: C23C14/34 ,  B22F1/00

CPC classification number: C23C14/3414 ,  B21C23/001

Abstract: A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to epsilon of at least about 4. Further, the deforming may include equal channel angular extrusion.

Abstract translation: 材料可以包括尺寸使得测量面积的至少99％含有表现出小于测量区域的平均粒度的面积的10倍的颗粒的颗粒。 作为实例，测量面积的至少99％可以含有晶粒面积小于平均晶粒尺寸面积的8,6或3倍的晶粒。 颗粒的平均粒度也可以小于最小静态再结晶晶粒尺寸的3倍，例如，平均粒度小于约50微米，10微米或1微米。 该材料可以由溅射靶材组成，并且薄膜可以从这样的溅射靶材沉积在衬底上。 微观还原方法可以包括从包括如上所述尺寸的晶粒的溅射靶溅射膜。 溅射靶的形成方法可以包括使溅射材料变形。 在变形之后，溅射材料可以被成形为溅射靶的至少一部分。 溅射靶可以包括如上所述的尺寸的晶粒。 此外，变形可以引起对应于至少约4的ε的应变水平。此外，变形可以包括相等的通道角挤压。

公开(公告)号：WO2006119367A3

公开(公告)日：2007-04-12

申请号：PCT/US2006016994

申请日：2006-05-02

Applicant: HONEYWELL INT INC ,  HORT WERNER H ,  SAYLES SCOTT R ,  SPEZIALE VINCE ,  FERRASSE STEPHANE ,  DETLAFF HAROLD A ,  WRIGHT STUART D ,  ALFORD FRANK ,  WRAGG ANDREW N A

Inventor： HORT WERNER H ,  SAYLES SCOTT R ,  SPEZIALE VINCE ,  FERRASSE STEPHANE ,  DETLAFF HAROLD A ,  WRIGHT STUART D ,  ALFORD FRANK ,  WRAGG ANDREW N A

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3497

Abstract: The invention includes backing plates having coolant deflectors with at least a portion of each of the deflectors being nonlinear. Projections projecting from the backing plate are configured to insert into openings within a sputtering target. The invention includes targets having at least one opening to receive a fastener extending into the target through a back surface. The invention includes a target assembly having projections projecting from the backing plate and insertable within openings within the target. The invention includes a target assembly having a plurality of coolant deflectors disposed between the target and the backing plate. A segment of each of the deflectors is nonlinear. The invention includes methods of cooling a target. Coolant deflectors are disposed within a gap between the target and a backing plate with coolant deflectors being nonlinear along at least a portion of their length.

Abstract translation: 本发明包括具有冷却剂偏转器的背板，每个偏转器的至少一部分是非线性的。 从背板突出的突出构造成插入到溅射靶内的开口中。 本发明包括具有至少一个开口以接收通过后表面延伸到靶中的紧固件的靶。 本发明包括具有从背板突出并且可插入目标内的开口内的突起的目标组件。 本发明包括具有设置在目标和背板之间的多个冷却剂导流器的目标组件。 每个偏转器的一段是非线性的。 本发明包括冷却靶的方法。 冷却剂偏转器设置在靶和背板之间的间隙内，其中冷却剂导流器沿其长度的至少一部分是非线性的。

公开(公告)号：WO2005074640A3

公开(公告)日：2006-03-09

申请号：PCT/US2005003437

申请日：2005-02-02

Applicant: HONEYWELL INT INC ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  KIM JAEYEON ,  GRABMEIER SUSANNE I ,  STROTHERS SUSAN D ,  WRAGG ANDREW N A ,  PRATER ROBERT M ,  HORT WERNER H ,  PAYTON MICHAEL D

Inventor： FERRASSE STEPHANE ,  ALFORD FRANK ,  KIM JAEYEON ,  GRABMEIER SUSANNE I ,  STROTHERS SUSAN D ,  WRAGG ANDREW N A ,  PRATER ROBERT M ,  HORT WERNER H ,  PAYTON MICHAEL D

IPC: C23C14/34 ,  C23C14/32

CPC classification number: C23C14/3407 ,  H01J37/3423 ,  H01J37/3426

Abstract: The invention includes a target construction having a sputtering region and a flange region (22). The flange region (22) has a protective layer (50) present over at least a portion of a front surface. The invention includes a sputtering target construction having a flange region (22) where a front surface of the flange region (22) has a planar portion. A groove (26) is disposed within the front surface and a sloped portion of the front surface is disposed laterally outward from the groove (26) relative to the planar portion, the sloped portion being angled relative to the planar portion. The invention includes a target construction having an o-ring groove (26) disposed within a flange region (22). The o-ring channel has a base surface, an orifice, a first sidewall extending from the base surface to the orifice, and a second sidewall opposing the first sidewall. A first corner angle and a second corner angle within the channel are non-equivalent.

Abstract translation: 本发明包括具有溅射区域和凸缘区域（22）的目标结构。 凸缘区域（22）具有存在于前表面的至少一部分上的保护层（50）。 本发明包括具有凸缘区域（22）的溅射靶结构，其中凸缘区域（22）的前表面具有平面部分。 凹槽（26）设置在前表面内，并且前表面的倾斜部分相对于平面部分从凹槽（26）横向向外设置，倾斜部分相对于平面部分成角度。 本发明包括具有设置在凸缘区域（22）内的O形环槽（26）的目标结构。 O形环通道具有基面，孔口，从基面延伸到孔口的第一侧壁和与第一侧壁相对的第二侧壁。 通道内的第一个角角和第二个角角度是非等效的。

公开(公告)号：WO2004042104A3

公开(公告)日：2005-05-19

申请号：PCT/US0315545

申请日：2003-05-14

Applicant: HONEYWELL INT INC

Inventor： GLASS HOWARD L ,  FERRASSE STEPHANE ,  ALFORD FRANK

IPC: C23C14/16 ,  C23C14/34 ,  C23C14/58 ,  B32B15/10

CPC classification number: C23C14/3414 ,  C23C14/165 ,  C23C14/5853 ,  Y10T428/32

Abstract: The invention includes methods of forming a barrier layer. Material is ablated from an ECAE target to form a layer having a thickness variance of less than or equal to 1 % of 1-sigma across a substrate surface. The invention includes a method of forming a tunnel junction (40). A thin film (20) is formed between first and second magnetic layers (18, 26). The thin film (20), the first magnetic layer (18), and/or the second magnetic layer (26) are formed by ablating material from an ECAE target to provide improved layer thickness uniformity relative to corresponding layers formed utilizing non-ECAE targets. The invention includes a physical vapor deposition target and a thin film formed using the target. The target contains an alloy of aluminum and at least one alloying element selected from Ga, Zr and In. The resulting film has a thickness variance across the thin film of less than 1.5 % of 1-sigma.

Abstract translation: 本发明包括形成阻挡层的方法。 材料从ECAE靶中消融，以形成厚度方差小于或等于1-sigma跨衬底表面1％的层。 本发明包括形成隧道结（40）的方法。 在第一和第二磁性层（18,26）之间形成薄膜（20）。 薄膜（20），第一磁性层（18）和/或第二磁性层（26）通过从ECAE靶材中烧蚀材料形成，以提供相对于使用非ECAE靶材形成的相应层的改善的层厚度均匀性 。 本发明包括物理气相沉积靶和使用靶形成的薄膜。 靶包含铝合金和至少一种选自Ga，Zr和In的合金元素。 所得薄膜的薄膜厚度方差小于1-Sigma的1.5％。