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    COPPER SPUTTERING TARGETS AND METHODS OF FORMING COPPER SPUTTERING TARGETS
    1.
    发明申请
    COPPER SPUTTERING TARGETS AND METHODS OF FORMING COPPER SPUTTERING TARGETS 审中-公开
    铜喷溅目标和形成铜溅射目标的方法

    公开(公告)号：WO2004011691B1

    公开(公告)日：2004-04-22

    申请号：PCT/US0322080

    申请日：2003-07-14

    Applicant: HONEYWELL INT INC

    Inventor： SEGAL VLADIMIR ,  WUWEN YI ,  FERRASSE STEPHANE ,  WU CHI TSE ,  STROTHERS SUSAN D ,  ALFORD FRANK A ,  WILLETT WILLIAM B

    IPC: B21J5/00 ,  B21C23/01 ,  C22C9/01 ,  C22C9/02 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22F1/00 ,  C22F1/08 ,  C23C14/34 ,  H01L21/285

    CPC classification number: B21C23/01 ,  B21C23/001 ,  C22F1/08 ,  C23C14/3414 ,  Y10T428/12118

    Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

    Abstract translation: 本发明包括一种含铜溅射靶。 目标是整体或结合的，并且含有至少99.99重量％的铜，其平均粒度为1微米至50微米。 包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括铜合金整体和结合的溅射靶，其基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。 靶材具有小于1微米至50微米的平均粒度，并且在整个靶材中具有小于约15％标准偏差（1-sigma）的晶粒尺寸不均匀性。 本发明还包括生产粘结和整体铜和铜合金靶的方法。

    SPUTTERING TARGET
    2.
    发明申请
    SPUTTERING TARGET 审中-公开
    飞溅目标

    公开(公告)号：WO0236847A3

    公开(公告)日：2003-02-13

    申请号：PCT/US0151010

    申请日：2001-10-25

    Applicant: HONEYWELL INT INC

    Inventor： SEGAL VLADIMIR ,  FERRASSE STEPHANE ,  ALFORD FRANK

    IPC: C22F1/04 ,  C22C21/12 ,  C22F1/00 ,  C22F1/08 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285

    CPC classification number: C23C14/3414 ,  B21C23/001 ,  B21J1/025 ,  C22F1/00

    Abstract: The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.

    Abstract translation: 本发明包括由面心立方晶胞金属或合金组成并具有小于30微米，优选小于1微米的均匀晶粒尺寸的物理气相沉积靶; 和均匀的轴向或平面<220>纹理。 还描述了制造溅射靶的方法。 该方法可以包括坯料制备; 具有规定路线和通行数的等通道角挤压; 并在等通道角挤压之后进行交叉轧制或锻造。

    SPUTTERING TARGET
    3.
    发明申请
    SPUTTERING TARGET 审中-公开
    飞溅目标

    公开(公告)号：WO0194660A3

    公开(公告)日：2002-05-30

    申请号：PCT/US0117798

    申请日：2001-05-31

    Applicant: HONEYWELL INT INC ,  SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

    Inventor： SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

    IPC: C23C14/34 ,  B22F1/00

    CPC classification number: C23C14/3414 ,  B21C23/001

    Abstract: A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to epsilon of at least about 4. Further, the deforming may include equal channel angular extrusion.

    Abstract translation: 材料可以包括尺寸使得测量面积的至少99％含有表现出小于测量区域的平均粒度的面积的10倍的颗粒的颗粒。 作为实例，测量面积的至少99％可以含有晶粒面积小于平均晶粒尺寸面积的8,6或3倍的晶粒。 颗粒的平均粒度也可以小于最小静态再结晶晶粒尺寸的3倍，例如，平均粒度小于约50微米，10微米或1微米。 该材料可以由溅射靶材组成，并且薄膜可以从这样的溅射靶材沉积在衬底上。 微观还原方法可以包括从包括如上所述尺寸的晶粒的溅射靶溅射膜。 溅射靶的形成方法可以包括使溅射材料变形。 在变形之后，溅射材料可以被成形为溅射靶的至少一部分。 溅射靶可以包括如上所述的尺寸的晶粒。 此外，变形可以引起对应于至少约4的ε的应变水平。此外，变形可以包括相等的通道角挤压。

    Sputtering target
    8.
    发明专利
    Sputtering target 未知

    公开(公告)号：AU2002231352A1

    公开(公告)日：2002-05-15

    申请号：AU2002231352

    申请日：2001-10-25

    Applicant: HONEYWELL INT INC

    Inventor： ALFORD FRANK ,  SEGAL VLADIMIR ,  FERRASSE STEPHANE

    IPC: C22F1/04 ,  C22C21/12 ,  C22F1/00 ,  C22F1/08 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285

    Abstract: The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.

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