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公开(公告)号：AU2003265887A1
公开(公告)日：2004-03-29
申请号：AU2003265887
申请日：2003-09-04
Applicant: HONEYWELL INT INC
Inventor： JOHNSON RALPH H , GUENTER JAMES K , KIM JIN K
IPC: C30B23/02 , H01L21/205 , C30B29/40 , H01L21/203
Abstract: MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
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