公开(公告)号：KR20200132813A

公开(公告)日：2020-11-25

申请号：KR20200154522

申请日：2020-11-18

Applicant: HOYA CORP

Inventor： IMASHIKI NOBUHISA ,  YOSHIKAWA YUTAKA ,  SUGAWARA HIROYUKI

IPC: G03F1/26 ,  G02F1/136 ,  G03F1/32 ,  G03F1/34 ,  G03F7/20 ,  H01L27/32

Abstract: 본발명은, 표시장치제조용마스크의노광환경에유리하게적합하고, 미세한패턴을안정적으로전사할수 있는우수한포토마스크및 그제조방법을얻을수 있다. 투명기판상에형성된전사용패턴을구비하는포토마스크로서, 상기전사용패턴은, 직경 W1(㎛)의주 패턴과, 상기주 패턴의근방에배치된, 폭 d(㎛)의보조패턴과, 상기주 패턴및 상기보조패턴이형성되는이외의영역에배치된저투광부를갖고, 상기주 패턴및 상기보조패턴을투과하는대표파장의위상차가대략 180도이며, 직경 W1, 폭 d, 상기보조패턴의투과율 T1(%), 상기저투광부의투과율 T3(%) 및상기주 패턴의중심과상기보조패턴의폭 방향의중심과의거리 P(㎛)가소정의관계를갖는포토마스크이다.

公开(公告)号：JP2014102496A

公开(公告)日：2014-06-05

申请号：JP2013210145

申请日：2013-10-07

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： IMASHIKI NOBUHISA

IPC: G03F1/36 ,  G02F1/1368

Abstract: PROBLEM TO BE SOLVED: To obtain a photomask yielding a greater focus margin at the time of exposure.SOLUTION: The provided photomask for manufacturing a display device is a photomask for manufacturing a display device including a pattern for transfer and having the following characteristics: the pattern for transfer includes: a main pattern consisting of a translucent portion and having a diameter of 4 μm or less; and an auxiliary pattern consisting of a translucent portion having a width not resolved by exposure and configured on the peripheries of the main pattern; virtually no phase difference exists between an exposure beam transmitted through the main pattern and an exposure beam transmitted through the auxiliary pattern; in a case where the distance between the center of the main pattern and the center of the width of the auxiliary pattern is defined as a pitch P (μm), the pitch P is set so as to induce the entry, into the optical system of an exposure machine used for the exposure, of a ±primary diffraction beam arising as a result of an optical interference attributed to the exposure beam transmitted through the main pattern and the exposure beam transmitted through the auxiliary pattern.

Abstract translation: 要解决的问题：获得在曝光时产生更大聚焦余量的光掩模。解决方案：用于制造显示装置的所提供的光掩模是用于制造包括用于转印的图案并具有以下特征的显示装置的光掩模： 用于转印的图案包括：由半透明部分构成的直径为4μm以下的主图案; 以及辅助图案，其由具有未被曝光分解的宽度的半透明部分构成并构成在主图案的周边上; 实际上，通过主图案透射的曝光光束和透过辅助图案的曝光光束之间不存在相位差; 在将主图案的中心与辅助图案的宽度的中心之间的距离定义为间距P（μm）的情况下，将间距P设定为引入进入光学系统的光学系统 用于曝光的曝光机构，由于通过主图案传播的曝光光束和通过辅助图案传输的曝光光束引起的光学干涉而产生的±初级衍射光束。

公开(公告)号：JP2013250478A

公开(公告)日：2013-12-12

申请号：JP2012126114

申请日：2012-06-01

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： IMASHIKI NOBUHISA

IPC: G03F1/28

Abstract: PROBLEM TO BE SOLVED: To provide a photomask with which a fine pattern can be accurately and precisely transferred, and to provide a transfer method and a method for manufacturing a flat panel display.SOLUTION: The photomask has a transfer pattern formed on a transparent substrate, wherein the transfer pattern includes a light-shielding part that blocks at least a part of exposure light and a light-transmitting part exposing the transparent substrate. The light-shielding part includes an edge region formed along an outer periphery of the light-shielding part with a predetermined width, and a center region formed in a part except for the edge region of the light-shielding part. The center region is formed to give an about 180 degrees of a phase shift amount to light at a representative wavelength included in the exposure light that transmits through the light-transmitting part, while the edge region is formed to give a phase shift amount smaller than that of the center region to the light at the representative wavelength. An optical film having 50% or less of a transmittance with respect to the light at the representative wavelength is formed in the edge region.

Abstract translation: 要解决的问题：提供一种精密图案可精确和精确地转印的光掩模，并提供一种平板显示器的转印方法和方法。解决方案：光掩模具有形成在透明基板上的转印图案 其中，所述转印图案包括阻挡曝光光的至少一部分的遮光部和露出所述透明基板的透光部。 遮光部包括具有预定宽度的沿着遮光部的外周形成的边缘区域，以及形成在除了遮光部的边缘区域以外的部分的中心区域。 中心区域被形成为对透过透光部分的曝光光中包括的代表性波长的光赋予大约180度的相移量，同时形成边缘区域以使相位偏移量小于 中心区域到代表波长的光。 在边缘区域形成有相对于代表性波长的光具有50％以下的透射率的光学膜。