公开(公告)号：JP2014137388A

公开(公告)日：2014-07-28

申请号：JP2013004370

申请日：2013-01-15

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN ,  SHISHIDO HIROAKI ,  SAKAI KAZUYA

IPC: G03F1/32

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank which has high uniformity of the composition and optical characteristics in the plane and the film thickness direction of a phase shift film, even when a silicon based material is used in forming the phase shift film, and high uniformity of the composition and optical characteristics of phase shift films among a plurality of substrates and is low-defect.SOLUTION: In a mask blank, a phase shift film which transmits ArF exposure light with a specified transmissivity and causes a phase shift of a specified amount in the transmitted ArF exposure light is formed on a translucent substrate. The phase shift film includes a structure in which a low-transmission layer and a high-transmission layer are laminated together. The low- and high-transmission layers are composed of a silicon- or nitrogen-based material which may contain one or more elements selected from metalloid and non-metallic elements and rare gases, and the low-transmission layer is lower in nitrogen content than the high-transmission layer.

Abstract translation: 要解决的问题：即使在形成相变膜时使用硅基材料，也可以提供一种具有均匀性均匀的组合物和相移膜的平面和膜厚度方向的光学特性的掩模坯料，以及 多个基板中的相移膜的组成和光学特性的高均匀性并且是低缺陷。解决方案：在掩模坯料中，透射具有指定透射率的ArF曝光光并导致相位偏移的相移膜 传输的ArF曝光光中的指定量形成在透光性基板上。 相移膜包括其中低透射层和高透射层层压在一起的结构。 低透射层和高透射层由可以含有选自准金属和非金属元素和稀有气体的一种或多种元素的硅或氮基材料组成，并且低透射层的氮含量低于 高传输层。

公开(公告)号：JP2013214090A

公开(公告)日：2013-10-17

申请号：JP2013127779

申请日：2013-06-18

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： HASHIMOTO MASAHIRO ,  KOMINATO ATSUSHI ,  IWASHITA HIROYUKI ,  NOZAWA JUN

IPC: G03F1/58 ,  G03F1/00 ,  G03F1/74

CPC classification number: G03F1/74 ,  G03F1/50 ,  G03F1/54 ,  G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank that is optimally applicable to modification of an EB defect, and enables a light shield film to be made thinner.SOLUTION: The mask blank including a thin film for forming a transfer pattern on a translucent substrate consists of at least a two-layer structure made of an under layer and an upper layer. The thin film is composed of a material that contains a transition metal and silicon, and further at least one element or more selected from oxygen and nitrogen. In the upper layer, a total content of the nitrogen and the oxygen in a layer is 30 atom% or more, and a content of the transition metal is 10 atom% or less, and a ratio of a content of the transition metal divided by a total content of the transition metal and the silicon is 4% or more. In the under layer, a sheet resistance value is 3 kΩ/sq. or less.

Abstract translation: 要解决的问题：提供最佳地适用于EB缺陷的修改的掩模坯料，并且能够使遮光膜变薄。解决方案：掩模坯料包括用于在透光性基板上形成转印图案的薄膜 由至少由下层和上层构成的两层结构构成。 该薄膜由含有过渡金属和硅的材料构成，还有至少一种选自氧和氮的元素。 在上层中，层中的氮和氧的总含量为30原子％以上，过渡金属的含量为10原子％以下，过渡金属的含量除以 过渡金属和硅的总含量为4％以上。 在下层中，薄层电阻值为3k＆OHgr / sq。 或更少。

公开(公告)号：JP2012208505A

公开(公告)日：2012-10-25

申请号：JP2012123512

申请日：2012-05-30

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN

IPC: G03F1/54 ,  C23C14/06 ,  G03F1/22 ,  G03F1/24 ,  H01L21/027 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a photo-mask blank capable of forming an extremely minute pattern, and to provide a photo-mask with a minute pattern formed on the photo-mask blank.SOLUTION: A photo-mask blank comprises a thin film consisting of at least two layers on a transparent substrate. The thin film comprises: a first layer consisting of material containing tantalum, nitrogen, and xenon; and a second layer consisting of material containing tantalum, oxygen and argon laminated on an upper surface of the first layer.

Abstract translation: 要解决的问题：提供一种能够形成非常微小的图案的光掩模坯料，并且提供在光掩模坯料上形成的微小图案的光掩模。 解决方案：光掩模坯料包括由透明衬底上的至少两层构成的薄膜。 薄膜包括：由含有钽，氮和氙的材料组成的第一层; 以及由层叠在第一层的上表面上的含有钽，氧和氩的材料构成的第二层。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012203201A

公开(公告)日：2012-10-22

申请号：JP2011067772

申请日：2011-03-25

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SHISHIDO HIROAKI ,  NOZAWA JUN

IPC: G03F1/54 ,  C23C14/34

Abstract: PROBLEM TO BE SOLVED: To form a film with a more uniform film thickness than conventional one in a method for forming a film by sputtering.SOLUTION: In the method for forming a thin film on a film formation target surface of a substrate by sputtering, a sputtering target is an ingot made of a material containing metal and rolled in an uniaxial rolling direction, and the thin film is formed while the substrate is rotated around a rotation axis passing the center of the film formation target surface. A sputter surface of the sputtering target is disposed so as to face the film formation target surface of the substrate and have a prescribed angle to the film formation target surface, and the rotation axis of the substrate and a line passing the center of the sputter surface and being parallel with the rotation axis of the substrate are shifted from each other, and the sputtering target is disposed so that the rolling direction is substantially vertical to a plane parallel with both the rotation axis of the substrate and a plane vertical to the sputter surface.

Abstract translation: 要解决的问题：在通过溅射形成膜的方法中，形成具有比常规膜厚更均匀的膜。 解决方案：在通过溅射在基板的成膜靶表面上形成薄膜的方法中，溅射靶是由包含金属的材料制成的锭，并且在单轴轧制方向上滚动，并且薄膜是 当基板围绕通过成膜靶表面的中心的旋转轴线旋转时形成。 溅射靶的溅射表面设置成与基底的成膜靶表面相对，并且与成膜靶表面具有规定的角度，并且基板的旋转轴线和通过溅射表面的中心的线 并且与基板的旋转轴线平行地彼此偏移，并且设置溅射靶，使得轧制方向基本上垂直于与基板的旋转轴线平行的平面和垂直于溅射表面的平面 。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012078441A

公开(公告)日：2012-04-19

申请号：JP2010221661

申请日：2010-09-30

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： KOMINATO ATSUSHI ,  HASHIMOTO MASAHIRO ,  NOZAWA JUN

IPC: G03F1/54

CPC classification number: G03F1/50 ,  G03F1/00 ,  G03F1/26 ,  G03F1/58 ,  G03F7/20 ,  G03F7/2041 ,  H01L21/266 ,  H01L21/268 ,  H01L21/31138

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank which largely reduces various loads relating to manufacture of a transfer mask by a light-shielding film with a reduced EMF bias and can satisfy a condition that the light-shielding film ensures a sufficient optical density, and to provide a transfer mask.SOLUTION: A mask blank is used to manufacture a binary mask adapted to be applied with ArF excimer laser exposure light and comprises, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a light-shielding layer and a surface antireflection layer and has an optical density of 2.8 or more for the exposure light and a thickness of 45 nm or less, and the light-shielding layer is made of a material having a total content of transition metal and silicon of 90 atom% or more and has a thickness of 30 nm or more, and the surface antireflection layer has a thickness of 3 nm or more and 6 nm or less, and a phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30° or less.

Abstract translation: 要解决的问题：提供一种掩模坯料，其通过具有减小的EMF偏压的遮光膜大大减少与制造转印掩模有关的各种负载，并且可以满足光屏蔽膜确保足够的条件 光密度，并提供转印掩模。 解决方案：掩模坯料用于制造适于施加ArF准分子激光曝光光的二进制掩模，并且在透明基板上包括用于形成转印图案的遮光膜。 遮光膜具有遮光层和表面防反射层的层叠结构，曝光用光密度为2.8以上，厚度为45nm以下，形成遮光层 具有90原子％以上的过渡金属和硅的总含量的材料，其厚度为30nm以上，表面防反射层的厚度为3nm以上且6nm以下，相位 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光之间的差为30°以下。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011227950A

公开(公告)日：2011-11-10

申请号：JP2010094679

申请日：2010-04-16

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN ,  HASHIMOTO MASAHIRO

IPC: G11B5/84 ,  B29C59/02 ,  H01L21/027

CPC classification number: G11B5/855 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0015

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank which can form a minute mold pattern with high pattern accuracy in manufacturing an imprint mold.SOLUTION: A mask blank 10 has a translucent substrate 1 and a thin film 2 formed so as to be in contact with a surface of the substrate. The thin film 2 is made of a laminated film including an upper layer 4 made of a material containing Si or a material containing Ta, and a lower layer 3 made of a material containing at least one of Hf and Zr and substantially not containing oxygen.

Abstract translation: 要解决的问题：提供一种掩模坯料，其可以在制造压印模具时形成具有高图案精度的微小模具图案。 解决方案：掩模坯料10具有透光性基板1和形成为与基板的表面接触的薄膜2。 薄膜2由包括由含Si的材料制成的上层4或含有Ta的材料的层叠膜构成，下层3由包含Hf和Zr中的至少一种并且基本上不含氧的材料制成。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2007114336A

公开(公告)日：2007-05-10

申请号：JP2005303956

申请日：2005-10-19

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN

IPC: G03F1/22 ,  G03F1/24 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a reflective mask blank substrate having high surface smoothness that increases the reflectance against exposure light, and having little defects, to provide a high-quality reflective mask blank having little defects and increased reflectance of a multilayered reflecting film against exposure light, and to provide a high-quality reflective mask having no pattern defect caused by a surface defect on a reflecting surface of the mask and showing excellent pattern transfer property.
SOLUTION: The reflective mask blank substrate is obtained by polishing the principal surface of a light-transmitting substrate essentially comprising glass to a predetermined surface roughness and then subjecting the substrate to ion beam irradiation while the substrate is placed to allow the ion beam to be incident to the principal surface of the substrate at an incident angle of 20° or more and less than 90° and the substrate is rotated. The reflective mask blank is obtained by depositing a multilayered reflecting film and an absorbent film on the reflective mask blank substrate. The absorbent film of the reflective mask blank is patterned to obtain the reflective mask.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有高的表面平滑度的反射掩模坯料基板，其增加了对曝光光的反射率并且几乎没有缺陷，以提供具有很小缺陷和增加的多层反射率的高质量反射掩模坯料 反射膜抵抗曝光光，并且提供一种由掩模的反射表面上的表面缺陷引起的没有图案缺陷的高质量反射掩模，并且显示出优异的图案转印性能。 解决方案：通过将基本上包含玻璃的透光性基板的主表面抛光至预定的表面粗糙度，然后对基板进行离子束照射，同时将基板放置以允许离子束 以20°以上且小于90°的入射角入射到基板的主面，并且基板旋转。 通过在反射掩模基板上沉积多层反射膜和吸收膜来获得反射掩模板。 将反射掩模坯料的吸收膜图案化以获得反射掩模。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2003280168A

公开(公告)日：2003-10-02

申请号：JP2002082021

申请日：2002-03-22

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SHIODA YUUKI ,  NOZAWA JUN ,  OKUBO AKIRA ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a halftone phase shifting mask capable of transferring a high-precision transfer pattern. SOLUTION: In a halftone phase shifting mask blank 1 having on a transparent substrate a halftone phase shifter film for forming a halftone phase shifter portion, the halftone phase shifter film 5 comprises an upper layer 4 comprising a material consisting essentially of silicon, oxygen and nitrogen and a lower layer 3 comprising a material consisting essentially of tantalum and hafnium. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供能够传送高精度转印图案的半色调相移掩模。 解决方案：在具有用于形成半色调移相器部分的半色调移相器薄膜上的透明基板上的半色调相移掩模板1中，半色调移相器膜5包括上层4，上层4包括基本上由硅组成的材料， 氧和氮，下层3包括基本上由钽和铪组成的材料。 版权所有（C）2004，JPO

公开(公告)号：JPH11345413A

公开(公告)日：1999-12-14

申请号：JP14399299

申请日：1999-05-24

Applicant: HOYA CORP

Inventor： MOROISHI KEIJI ,  HORIKAWA JUNICHI ,  KOBAYASHI MASATO ,  NOZAWA JUN

IPC: G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B5/738

Abstract: PROBLEM TO BE SOLVED: To increase the coercive force and the product of residual magnetization and film thickness of a magnetic recording medium, to decrease changes with time, and to decrease the medium noise during recording and reproducing. SOLUTION: A base coating layer 2 containing Cr and Mo is formed on a glass substrate (nonmagnetic substrate) 1, and a magnetic layer 3 containing Co and Pt is formed on the base coating layer. Further, Mo may be added to the magnetic layer 3, and if necessary, other additive elements are added to the base coating layer and the magnetic layer. If necessary, a protective layer 4 and a lubricating layer 5 are successively formed on the magnetic layer.

公开(公告)号：JPH11316933A

公开(公告)日：1999-11-16

申请号：JP269899

申请日：1999-01-08

Applicant: HOYA CORP

Inventor： KOBAYASHI MASATO ,  MOROISHI KEIJI ,  HORIKAWA JUNICHI ,  NOZAWA JUN

IPC: G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B5/738 ,  G11B5/84 ,  G11B5/85 ,  G11B5/851 ,  H01F10/16 ,  H01F10/30

Abstract: PROBLEM TO BE SOLVED: To obtain a magnetic recording medium having a difference in the spacings between crystal lattice faces of a specific range by regulating the forming conditions for a nonmagnetic ground surface layer consisting essentially of Cr and V and a CoPt-base magnetic layer. SOLUTION: The nonmagnetic ground surface layer of the magnetic recording medium having the nonmagnetic ground surface layer and CoPt-base magnetic layer in this order on a substrate consists of the layers of >=1 layer and the nonmagnetic ground surface layer in contact with the CoPt-base magnetic layer consists of material consisting essentially of the Cr and V. The difference (d(002) -d(110) ) obtd. by subtracting the spacing between the crystal lattice faces of the bcc(110) face of the nonmagnetic ground surface layer consisting of the material consisting essentially of the Cr and V from the spacing between the crystal lattice faces of the hcp(002) face of the magnetic layer is set within a range of 0.002 to 0.032 Angstrom. The Co content of the CoPt-base magnetic layer preferably exists in a range of 70 to 80 at.%, the Pt content thereof 5 to 15 at.%, the Cr content thereof 5 to 25 at.%, and the Ta content thereof 1 to 7 at.%.