Abstract:
An ion-exchanged glass article manufacturing method includes an ion-exchange step of bringing a glass article with a composition containing Li into contact with a molten salt dissolved solution containing an alkali metal element having an ionic radius larger than an ionic radius of the Li contained in the glass article, thereby ion-exchanging the Li in the glass article with the alkali metal element in the molten salt dissolved solution. At least one kind of additive selected from the group consisting of NaF, KF, K3AlF6, Na2CO3, NaHCO3, K2CO3, KHCO3, Na2SO4, K2SO4, KAI(SO4)2, Na3PO4, and K3PO4 is added to the molten salt dissolved solution so that the ion-exchange step is carried out while the additive is in a solid state.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming minute nickel bumps having a uniform size when a large number of minute nickel bumps of several tens of μm size in a membrane ring with bumps are formed by electroplating. SOLUTION: A plate-shaped filter 17 composed of an inorganic porous body, formed by sintering fine particles of soda lime glass and having micropores having ≤0.5 μm pore diameter is provided in a treatment tank 11 so as to be parallel to a membrane ring of a cathode 13 and electroplating is performed. Thereby, diffusion of slime composed of a nickel particle having a nearly sub micron size to the cathode 13 side can be satisfactorily prevented and uniform nickel bumps 26 can be formed. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To improve an yield by improving the positional precision of a bump in a membrane ring with the bump. SOLUTION: On an aluminum plate 13 warmed at 100°C, a laminate film 28 comprised of copper foil and a polyimide film is formed while bringing a copper foil side into contact with the aluminum plate 13 and a rigid ring 23 coated with a thermosetting adhesive and comprised of SiC and a ring-shaped SUS weight stone 14 (whose weight is about 2.5 kg) are sequentially installed thereon. The laminate film 28, the ring 23 and the weight stone 14 are then warmed while being left for about five minutes until a temperature reaches 100°C. Next, temperatures of the laminate film 28, the ring 23 and the weight stone 14 are elevated up to 120°C gradually for about five minutes by a heater controlled by a temperature adjusting means. They are finally left at 120°C for 45 minutes to harden the thermosetting adhesive, thereby adhering the laminate film 28 and the ring 23. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To favorably regenerate a glass substrate for a mask blank by reliably stripping a thin film while suppressing the glass substrate from roughening, when a thin film containing metal, silicon and nitrogen is stripped with a stripping liquid. SOLUTION: The glass substrate for a mask blank having a thin film essentially comprising the metal, the silicon and the nitrogen formed on a glass substrate is regenerated by stripping the thin film by bringing the thin film into contact with an aqueous solution containing at least one kind of fluorine compound selected from hydrofluoric acid, hydrosilicofluoric acid, ammonium hydrogenfluoride, and at least one kind of oxidizing agent selected from hydrogen peroxide, nitric acid and sulfuric acid, and containing the fluorine compound by 0.1 to 0.8 wt.%. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an etching liquid and an etching method suitable for the wet etching of an aluminum-containing material, and to provide a method for producing a counter substrate or the like. SOLUTION: The etching liquid for an aluminum-containing material is composed of a solution containing ammonium hydrogen fluoride, hydrogen peroxide and water. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To accurately align an anisotropic conductive rubber sheet and a membrane ring with a bump with each other. SOLUTION: The membrane with a bump comprises a membrane 20 wherein a hole 24 is formed for alignment whose relative position is already known with respect to a bump hole, an isolated pad to be brought into contact with the anisotropic conductive rubber sheet, a pad 28 for alignment whose relative position with respect to the isolated pad is already known, and a bump to be brought into contact with a semiconductor device. The hole 24 for alignment and the pad 28 for alignment are aligned with respect to an alignment 44 formed in the anisotropic conductive rubber sheet. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To enhance durability by controlling the hardness and separation resistance of a probe contact. SOLUTION: This contact component has a probe contact for contacting a part to be contacted which is formed by plating method. The probe contact (bump contact 2) of the contact component is made from a polycrystalline material with a crystal grain size of not less than 10 nm nor more than 40 nm. Thus, by adjusting the crystal grain size of the probe contact and the amount of carbon contained in the probe contact, the hardness and the separation resistance of the probe contact can be controlled. As a result, the contact component with the probe contact excellent in durability can be obtained. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a contact probe member and the like resolving the problem of a reflection at the end of a transmission line. SOLUTION: The contact probe member at least has a plurality of electrodes provided on an insulation board corresponding to each pad in a semiconductor device and a plurality of transmission lines provided on the insulation board and electrically connected to a plurality of electrodes. The contact probe member is characterized in that, for preventing the reflection from the end of the transmission lines, the contact probe member is provided with a termination resistor 80 at the end (a) of a transmission line. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a contact component for a wafer batch contact board on which the positioning accuracy of isolation pads and isolation bumps is improved, and manufacturing method, etc., of the same. SOLUTION: In a wafer batch contact board used for tests of many semiconductor devices formed on a wafer by a batch test system, in order to reduce the expansion of insulation film 32 in the contact area due to ring 31, remaining pattern 35 is formed on the front surface and/or rear surface of insulation film 32 for avoiding isolation pads 34 and/or isolation bumps 33 so that the positioning shift is limited within 5 ppm%.
Abstract:
PROBLEM TO BE SOLVED: To provide a wafer in-batch contact board together with its manufacturing method and the like, of noise-proof against high frequency, with improved high-frequency characteristics. SOLUTION: A wafer in-batch contact board is provided which is used for collectively testing semiconductor devices formed in multiple numbers on a wafer. Here, a GND wiring or a power-source wiring (GND pad 12c or power- source pad 12a) on a multilayer wiring board 10 is connected to a metal frame 22, supporting an anisotropic conductive rubber 21. To conductive patterns 35' and 35 on the surface of an insulating film 32 of a contact part 30, the GND wiring or the power-source wiring (GND pad 12c or power-source pad 12a) on the multilayer wiring board 10 is connected.