公开(公告)号：DE10393131T5

公开(公告)日：2005-08-11

申请号：DE10393131

申请日：2003-08-19

Applicant: HOYA CORP TOKIO TOKYO

Inventor： MITSUI MASARU

IPC: A61N5/00 ,  C23C14/00 ,  C23C14/06 ,  C23C14/32 ,  C23C14/34 ,  G03F1/24 ,  G03F1/32 ,  G03F1/68 ,  G03F9/00 ,  G21G5/00 ,  H01L21/027 ,  G03F1/08

Abstract: To provide a method for manufacturing a mask blank capable of manufacturing a high quality mask blank that suppresses generation of defects in a thin film for forming a mask pattern with high yields, a method for manufacturing a transfer mask that manufactures the thin film of the mask blank by patterning, and a sputtering target used for manufacturing the mask blank. By using the sputtering target containing silicon and having a hardness of 900 HV or more in Vickers' hardness, the thin film for forming the mask pattern on a substrate is formed by sputtering, and the high quality mask blank that suppresses generating of defects is manufactured, and further the transfer mask is manufactured by patterning the thin film.