公开(公告)号：US20040023509A1

公开(公告)日：2004-02-05

申请号：US10442051

申请日：2003-05-21

Applicant: HOYA CORPORATION

Inventor： Isao Amemiya

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  G03F1/20 ,  H01J2237/0453 ,  H01J2237/31788 ,  H01J2237/31794

Abstract: An electron beam mask substrate including a substrate layer to form a membrane layer support through backside etching, an etching stopper layer formed on the substrate layer, and a membrane layer formed on the etching stopper layer. When the tensile stress of the membrane layer is reduced with the reduction in the thickness of the layer and when the membrane part having the membrane layer and the etching stopper layer is deformed during backside processing owing to the influence of the stress of the etching stopper layer thereon, and/or when the membrane layer is deformed within a range not satisfying the mask pattern positioning accuracy during removal of the etching stopper layer, then the membrane stress of the membrane layer and the membrane stress of the etching stopper layer are so correlated that the membrane part is not deformed during backside processing, and/or so correlated that the membrane layer is not deformed over the range satisfying the mask pattern positioning accuracy during removal of the etching stopper layer. This allows for the production of a tough electron beam mask for which the membrane stress of the etching stopper is specifically so controlled as to reduce the deformation of the layer structure, and to provide an electron beam mask substrate and an electron beam mask blank which are for producing the electron beam mask.

Abstract translation: 电子束掩模基板，其包括通过背面蚀刻形成膜层的基板层，形成在基板层上的蚀刻停止层，以及形成在蚀刻停止层上的膜层。 当膜层的拉伸应力随着层的厚度的减小而减小，并且当由于蚀刻停止层的应力的影响而在背面加工期间具有膜层和蚀刻阻挡层的膜部分变形时 和/或当膜层在除去蚀刻阻挡层之前在不满足掩模图案定位精度的范围内变形时，膜层的膜应力和蚀刻停止层的膜应力如此相关，使得 膜部分在背面处理期间不变形，和/或如此相关，使得膜层在去除蚀刻停止层期间在满足掩模图案定位精度的范围内不变形。 这允许制造坚固的电子束掩模，其特别地控制蚀刻阻挡层的膜应力以减小层结构的变形，并提供电子束掩模基板和电子束掩模坯 用于产生电子束掩模。