公开(公告)号：AU6383000A

公开(公告)日：2001-02-19

申请号：AU6383000

申请日：2000-07-28

Applicant: HRL LAB LLC

Inventor： MICOVIC MIROSLAV ,  DOCTOR DANIEL P ,  MATLOUBIAN MEHRAN

IPC: H01L21/331 ,  H01L29/15 ,  H01L29/737

Abstract: A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected InxGa1-xAsySb1-y compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.