公开(公告)号：AU2002362394A1

公开(公告)日：2003-04-14

申请号：AU2002362394

申请日：2002-09-19

Applicant: HRL LAB LLC

Inventor： BREWER PETER D ,  POBANZ CARL W ,  MATLOUBIAN MEHRAN

IPC: G01V8/00 ,  H01L23/522 ,  H01L27/146 ,  H01L23/538

公开(公告)号：WO03029772A3

公开(公告)日：2003-06-19

申请号：PCT/US0229962

申请日：2002-09-19

Applicant: HRL LAB LLC

Inventor： POBANZ CARL W ,  MATLOUBIAN MEHRAN ,  BREWER PETER D

IPC: G01V8/00 ,  H01L23/522 ,  H01L27/146 ,  H01L23/538

CPC classification number: G01V8/005 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A focal plane array for millimeter wave imaging comprising a three dimensional stack of antenna elements and radiometer microwave monolithic integrated circuits (MMICs) embedded in polymer dielectric layers built on top of a silicon substrate. Each radiometer MMIC and antenna element comprise a radiometer pixel. The silicon substrate contains integrated circuits to collect and process the signals from each radiometer pixel and generate a full-frame video signal. The array can be fabricated on a single silicon wafer or can be constructed from structures fabricated on multiple silicon wafers.

Abstract translation: 一种用于毫米波成像的焦平面阵列，包括嵌入在硅衬底顶部上的聚合物介电层中的天线元件和辐射计微波单片集成电路（MMIC）的三维堆叠。 每个辐射计MMIC和天线元件包括辐射计像素。 硅基板包含集成电路，用于收集和处理来自每个辐射计像素的信号并生成全帧视频信号。 该阵列可以制造在单个硅晶片上，或者可以由制造在多个硅晶片上的结构构成。

公开(公告)号：WO0213272A3

公开(公告)日：2002-04-25

申请号：PCT/US0124605

申请日：2001-08-03

Applicant: HRL LAB LLC ,  NGUYEN CHANH ,  MATLOUBIAN MEHRAN

Inventor： NGUYEN CHANH ,  MATLOUBIAN MEHRAN

IPC: H01L29/93

CPC classification number: H01L29/93

公开(公告)号：AU5631900A

公开(公告)日：2001-01-09

申请号：AU5631900

申请日：2000-06-22

Applicant: HRL LAB LLC

Inventor： DOCTER DANIEL P ,  MICOVIC MIROSLAV ,  MATLOUBIAN MEHRAN

IPC: H01L21/331 ,  H01L29/737

公开(公告)号：AU8110401A

公开(公告)日：2002-02-18

申请号：AU8110401

申请日：2001-08-03

Applicant: HRL LAB LLC

Inventor： NGUYEN CHANH ,  MATLOUBIAN MEHRAN

IPC: H01L29/93 ,  H01L29/00

Abstract: The present invention provides a varactor diode for frequency multipliers at submillimeter wave frequencies and above. Functionally the new diode replaces the conventional heterostructure barrier varactor diode. Two important features of the antimony-based quantum well heterostructure barrier varactor are; first: an aluminum antimnide/aluminum-arsenic-antimnide heterostructure barrier and second: a bandgap-engineered, triangular quantum well cathode and anode.

公开(公告)号：AU6383000A

公开(公告)日：2001-02-19

申请号：AU6383000

申请日：2000-07-28

Applicant: HRL LAB LLC

Inventor： MICOVIC MIROSLAV ,  DOCTOR DANIEL P ,  MATLOUBIAN MEHRAN

IPC: H01L21/331 ,  H01L29/15 ,  H01L29/737

Abstract: A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected InxGa1-xAsySb1-y compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.