公开(公告)号：AU2794201A

公开(公告)日：2001-10-15

申请号：AU2794201

申请日：2001-01-18

Applicant: HRL LAB LLC

Inventor： POBANZ CARL W ,  MATLOUBIAN MEHRAN M

IPC: H01L29/8605 ,  G01K7/00

Abstract: A method and apparatus for substantially canceling the effects of temperature on the electrical performance of Field Effect Transistor (FET) integrated circuits (IC's) by exploiting a subtle feature of an epitaxial resistor implemented in an FET process. Specifically, the invention takes advantage of two constituent epitaxial resistor components having resistances that vary monotonically in opposite directions as functions of temperature. The invention includes a method for selecting the geometry of such an epitaxial resistor to give it either temperature invariance or a specific, useful functional temperature dependence.

公开(公告)号：WO0175982A3

公开(公告)日：2002-04-04

申请号：PCT/US0101625

申请日：2001-01-18

Applicant: HRL LAB LLC

Inventor： POBANZ CARL W ,  MATLOUBIAN MEHRAN M

IPC: H01L29/8605 ,  G01K7/00

CPC classification number: H01L29/8605

Abstract: A method and apparatus of substantially canceling the effects of temperature on the electrical performance of Field Effect Transistor (FET) integrated circuits (IC's) by exploiting a subtle feature of an epitaxial resistor implemented in an FET process. Specifically, the invention takes advantage of two constituent epitaxial resistor components having resistances that vary monotonically in opposite directions as functions of temperature. The essential components include: a plurality of ohmic contacts (100), and an isolated semi-conductor channel (102) residing in a layered semiconductor. The resistance of the epitaxial resistor R of the invention is comprised of an aggregate of resistances (FIG. 1c). The invention includes a method for selecting the geometry of such an epitaxial resistor to give it either temperature invariance or a specific, useful functional temperature dependence.

Abstract translation: 通过利用在FET工艺中实现的外延电阻的微妙特征，基本上消除了场效应晶体管（FET）集成电路（IC）的电气性能的影响的方法和装置。 具体地说，本发明利用具有作为温度函数的相反方向单调变化的电阻的两个构成的外延电阻器部件。 主要部件包括：多个欧姆接触（100）和驻留在分层半导体中的隔离半导体通道（102）。 本发明的外延电阻器R i的电阻由电阻的集合体构成（图1c）。 本发明包括一种用于选择这种外延电阻器的几何形状以提供温度不变性或特定的有用功能温度依赖性的方法。