Abstract:
Techniques for memory device writes based on mapping are provided. In one aspect, a block of data to be written to a line in a rank of memory may be received. The rank of memory may comprise multiple memory devices. The block of data may be written to a number of memory devices determined by the size of the block of data. A memory device mapping for the line may be retrieved. The mapping may determine the order in which the block of data is written to the memory devices within the rank. The block of data may be written to the memory devices based on the mapping.
Abstract:
According to an example, a hybrid synaptic architecture based neural network may be implemented by determining, from input data, information that is to be recognized, mined, and/or synthesized by a plurality of analog neural cores. Further, the hybrid synaptic architecture based neural network may be implemented by determining, based on the information, selected ones of the plurality of analog neural cores that are to be actuated to identify a data subset of the input data to generate, based on the analysis of the data subset, results of the recognition, mining, and/or synthesizing of the information.
Abstract:
A method to access a memory chip having memory banks includes processing read requests in a read queue, and when a write queue is filled beyond a high watermark, stopping the processing of the read requests in the read queue and draining the write queue until the write queue is under a low watermark. Draining the write queue include issuing write requests in an order based on information in the read queue. When the write queue is under the low watermark, the method includes stopping the draining of the write queue and again processing the read requests in the read queue.
Abstract:
Techniques for retrieving data blocks from memory devices are provided. In one aspect, a request to retrieve a block of data may be received. The block of data may be in a line in a rank of memory. The rank of memory may include multiple devices. The devices used to store the line in the rank of memory may be determined. The determined devices may be read.
Abstract:
A method of determining a current in a memory element of a crossbar array is described. In the method, a number of pre-access operations are initiated. Each pre-access operation includes discarding a previously stored sneak current, determining a new sneak current for the crossbar array, discarding a previously stored sneak current, and storing the new sneak current. In the method, in response to a received access command, an access voltage is applied to a target memory element of the crossbar array and an element current for the target memory element is determined based on an access current and a stored sneak current.
Abstract:
Techniques for data block write mapped to memory bank are provided. In one aspect, a block of data to be written to a line in a bank of a rank of memory may be received. The rank of memory may comprise multiple banks, and the block of data may be written to a number of memory devices determined by the size of the data block. A memory device mapping may be retrieved. The mapping may determine the order in which the block of data is written to the memory devices within the rank. It may be determined when the banks of the memory devices used to store the line are available for writing. The block of data may be written to the banks of the memory devices when the banks are available for writing.
Abstract:
Techniques for compressed data block mapping are provided. In one aspect, a request to retrieve a block of data stored in memory devices in a rank of memory may be received. The mapping that was used when the data block was stored may be determined. The retrieved data block may be ordered based on the determined mapping. The block of data may be decompressed.
Abstract:
Techniques for writing data to a subset of memory devices are described. In one aspect, a block of data to be written to a line in a rank of memory may be received. The rank of memory may comprise a set of memory devices. The block of data may be compressed. The compressed block of data may be written to a subset of the memory devices that comprise the line. The unwritten portions of the line may not be used to store valid data.