公开(公告)号：JPH05249676A

公开(公告)日：1993-09-28

申请号：JP33126892

申请日：1992-11-18

Applicant: IBM

Inventor： HAABANSU SHINGU SACHIDEEBU ,  UIRAADO AARU KONRII ,  PUREEMURAATA JIYAGANNATAN ,  AFUMADO DAAUUDO KATONAANI ,  RANII WAI RIN KUUON ,  REO ROORENSU RINEHAN ,  SUTEIIBU SEIICHI MIURA ,  RANDORUFU JIYOOZEFU SUMISU

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: PURPOSE: To obtain a high sensitivity and high contrast photoresist compsn. used for deep UV (200-370nm), i-line radiation, electron beam or X-ray lithography. CONSTITUTION: This photoresist compsn. contains a coating film forming polymer having arom. rings activated for electrophilic substitution, a crosslinking agent subjected to the catalytic action of a hydroxyl group stabilized carbonium ion forming acid and a photo-acid forming substance which forms such an acid under radiation. This compsn. can be developed with a water-soluble base.