公开(公告)号：JPH05249676A

公开(公告)日：1993-09-28

申请号：JP33126892

申请日：1992-11-18

Applicant: IBM

Inventor： HAABANSU SHINGU SACHIDEEBU ,  UIRAADO AARU KONRII ,  PUREEMURAATA JIYAGANNATAN ,  AFUMADO DAAUUDO KATONAANI ,  RANII WAI RIN KUUON ,  REO ROORENSU RINEHAN ,  SUTEIIBU SEIICHI MIURA ,  RANDORUFU JIYOOZEFU SUMISU

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: PURPOSE: To obtain a high sensitivity and high contrast photoresist compsn. used for deep UV (200-370nm), i-line radiation, electron beam or X-ray lithography. CONSTITUTION: This photoresist compsn. contains a coating film forming polymer having arom. rings activated for electrophilic substitution, a crosslinking agent subjected to the catalytic action of a hydroxyl group stabilized carbonium ion forming acid and a photo-acid forming substance which forms such an acid under radiation. This compsn. can be developed with a water-soluble base.

公开(公告)号：JPH05224411A

公开(公告)日：1993-09-03

申请号：JP26846992

申请日：1992-10-07

Applicant: IBM

Inventor： KURISUTOFUAA JIYON NOOZU ,  SUTEIIBU SEIICHI MIURA ,  MERUBIN UOREN MONTOGOMERII ,  UEIN MAATEIN MOROO ,  RANDORUFU JIYOZEFU SUMISU

IPC: G03F7/022 ,  H01L21/027

Abstract: PURPOSE: To obtain a high sensitivity, high contrast, excellent durability to the etching of an unexposed zone and vertical side wall shape, by containing a sensitizing agent of a mixed ester of bis and trisalkanes with a specific sulfonic acid. CONSTITUTION: This positive resist is constituted of a mixture of 100 pts.wt. phenol-aldehyde resin with 18-100 pts.wt. dissolution suppressing agent. The dissolution suppressing agent is the mixed ester introduced by esterifying a mixture naphthoquinone diazide 4- and 5-sulfonic acid with a polyphenol. The polyphenol is expressed by a formula, (ph(OH)x )y CR4-y . In the formula, ph expresses benzen ring, (x) expresses integers of 1-3, (y) expresses 2 or 3, R expresses hydrogen, fluorine or the like. The dissolution suppressing agnet has >=80% esterified hydroxyl group and contains 10-90mol% 4-sulfonate ester and 90-10mol% 5-sulfonate ester.

公开(公告)号：JPH03206458A

公开(公告)日：1991-09-09

申请号：JP3168190

申请日：1990-02-14

Applicant: IBM

Inventor： UIRIAMU ROSU BURANZUBOURUDO ,  KURISUTOFUAA JIYON NOOAZU ,  RANII WAIIRIN KUUON ,  SUTEIIBU SEIICHI MIURA ,  MERUBIN UOREN MONGOMERII ,  UEIN MAATEIN MOROO ,  HAABANZU SHINGU SAKUDEBU

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE: To chemically increase sensitivity by irradiation with UV, electron beams or X-rays by using a specified polymerizable or molecular compsn. and a specified precursor of sulfonic acid. CONSTITUTION: This photoresist contains a polymerizable or molecular compsn. whose solubility depends on the presence of a protective group capable of removal with an acid and a precursor of sulfonic acid generating the strong acid when exposed with radiation, that is, an N-fluoroalkylsulfonyloxyimide sensitizer and a polymerizable resin or a molecular monomer having a protective group such as a carbonate or carboxylate group capable of removal with the acid. When the sulfonyloxyimide sensitizer is used in various photoresist compsns, the sensitivities are increased and exposure is carried out under various radiation conditions. Chemical amplification is attained.