公开(公告)号：DE69107428T2

公开(公告)日：1995-08-10

申请号：DE69107428

申请日：1991-11-26

Applicant: IBM

Inventor： MENDEZ EMILIO EUGENIO ,  AHN DOYEOL

IPC: H01L33/06 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  H01S3/19 ,  H01S3/103 ,  H01L33/00 ,  H04B10/00

Abstract: A strained-layer quantum well (QW) or multi-quantum well (MQW) semiconductor laser device (10) having a polarization that is switchable between the TE and the TM modes by an electric field that is externally applied, via an electrode (22) perpendicularly to the layer (16) or layers of the quantum well. The polarization switching is a direct consequence of a valence-band reversal induced by the electric field in the strained-layer quantum well. An inversion population is maintained during the switching process, resulting in rapid switching times.

公开(公告)号：DE69107428D1

公开(公告)日：1995-03-23

申请号：DE69107428

申请日：1991-11-26

Applicant: IBM

Inventor： MENDEZ EMILIO EUGENIO ,  AHN DOYEOL

IPC: H01L33/06 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  H01S3/19 ,  H01S3/103 ,  H01L33/00 ,  H04B10/00

Abstract: A strained-layer quantum well (QW) or multi-quantum well (MQW) semiconductor laser device (10) having a polarization that is switchable between the TE and the TM modes by an electric field that is externally applied, via an electrode (22) perpendicularly to the layer (16) or layers of the quantum well. The polarization switching is a direct consequence of a valence-band reversal induced by the electric field in the strained-layer quantum well. An inversion population is maintained during the switching process, resulting in rapid switching times.