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    2.
    发明专利
    未知

    公开(公告)号：DE69217344T2

    公开(公告)日：1997-08-21

    申请号：DE69217344

    申请日：1992-07-09

    Applicant: IBM

    Inventor： FUKUZAWA TADASHI ,  LIU LING YI ,  MENDEZ EMILIO EUGENIO

    IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/34 ,  H01S3/103 ,  H01S3/19 ,  H01S3/094 ,  G02F1/01 ,  G02F1/03 ,  H04B10/00

    Abstract: The present invention is the use of coupled quantum wells (122, 126) in the active region of a semiconductor laser (30) to modulate the frequency and amplitude of the light output (50) of the laser (30). In a particular embodiment of the present invention the coupled quantum wells (122, 126) are contained in a graded index (115, 130) of refraction semiconductor double heterostructure laser (30). The active region (120) of this tunable laser (30) consists of two quantum wells (126, 122) having a width of approximately 5 nm or less which are separated by a barrier layer (124) having a width of approximately 2 nm or less. The quantum well material is intrinsic GaAs and the barrier layer is AlxGa1-xAs wherein x=.23. The active region (120) is surrounded by the double heterostructure in which one side is doped p-type and the second side is doped n-type. The resulting laser (30) is a p-i-n type structure. A reverse bias with respect to the flat band voltage of the p-i-n structure is applied across the p-i-n structure which modulates both the frequency and the intensity of the laser output (50). The tunable laser (30) is pumped with a variety of conventional means, including both electrical and optical (40) pumping. The modulation of the wavelength is approximately linear over a 1.5 volt operating range. A tunable laser (30), such as the present invention, having an output wavelength modulated by an electric field is useful in the field of optical communications and computing.

    4.
    发明专利
    未知

    公开(公告)号：DE69217344D1

    公开(公告)日：1997-03-20

    申请号：DE69217344

    申请日：1992-07-09

    Applicant: IBM

    Inventor： FUKUZAWA TADASHI ,  LIU LING YI ,  MENDEZ EMILIO EUGENIO

    IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/34 ,  H01S3/103 ,  H01S3/19 ,  H01S3/094 ,  G02F1/01 ,  G02F1/03 ,  H04B10/00

    Abstract: The present invention is the use of coupled quantum wells (122, 126) in the active region of a semiconductor laser (30) to modulate the frequency and amplitude of the light output (50) of the laser (30). In a particular embodiment of the present invention the coupled quantum wells (122, 126) are contained in a graded index (115, 130) of refraction semiconductor double heterostructure laser (30). The active region (120) of this tunable laser (30) consists of two quantum wells (126, 122) having a width of approximately 5 nm or less which are separated by a barrier layer (124) having a width of approximately 2 nm or less. The quantum well material is intrinsic GaAs and the barrier layer is AlxGa1-xAs wherein x=.23. The active region (120) is surrounded by the double heterostructure in which one side is doped p-type and the second side is doped n-type. The resulting laser (30) is a p-i-n type structure. A reverse bias with respect to the flat band voltage of the p-i-n structure is applied across the p-i-n structure which modulates both the frequency and the intensity of the laser output (50). The tunable laser (30) is pumped with a variety of conventional means, including both electrical and optical (40) pumping. The modulation of the wavelength is approximately linear over a 1.5 volt operating range. A tunable laser (30), such as the present invention, having an output wavelength modulated by an electric field is useful in the field of optical communications and computing.

    5.
    发明专利
    未知

    公开(公告)号：DE69107428T2

    公开(公告)日：1995-08-10

    申请号：DE69107428

    申请日：1991-11-26

    Applicant: IBM

    Inventor： MENDEZ EMILIO EUGENIO ,  AHN DOYEOL

    IPC: H01L33/06 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  H01S3/19 ,  H01S3/103 ,  H01L33/00 ,  H04B10/00

    Abstract: A strained-layer quantum well (QW) or multi-quantum well (MQW) semiconductor laser device (10) having a polarization that is switchable between the TE and the TM modes by an electric field that is externally applied, via an electrode (22) perpendicularly to the layer (16) or layers of the quantum well. The polarization switching is a direct consequence of a valence-band reversal induced by the electric field in the strained-layer quantum well. An inversion population is maintained during the switching process, resulting in rapid switching times.

    6.
    发明专利
    未知

    公开(公告)号：DE69107428D1

    公开(公告)日：1995-03-23

    申请号：DE69107428

    申请日：1991-11-26

    Applicant: IBM

    Inventor： MENDEZ EMILIO EUGENIO ,  AHN DOYEOL

    IPC: H01L33/06 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  H01S3/19 ,  H01S3/103 ,  H01L33/00 ,  H04B10/00

    Abstract: A strained-layer quantum well (QW) or multi-quantum well (MQW) semiconductor laser device (10) having a polarization that is switchable between the TE and the TM modes by an electric field that is externally applied, via an electrode (22) perpendicularly to the layer (16) or layers of the quantum well. The polarization switching is a direct consequence of a valence-band reversal induced by the electric field in the strained-layer quantum well. An inversion population is maintained during the switching process, resulting in rapid switching times.

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