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公开(公告)号：US3816223A
公开(公告)日：1974-06-11
申请号：US21225171
申请日：1971-12-27
Applicant: IBM
IPC: H01L21/027 , C23F1/00 , G03F1/54 , G02B5/22
CPC classification number: G03F1/54 , Y10T428/24331 , Y10T428/24612 , Y10T428/265
Abstract: A mask for the manufacture of semiconductor and various small components. Rare earth orthofertites, such as GdFeO3, as well as YFeO3, and LaFeO3 comprises the masking material. Rare earth combinations, such as (Gd, Eu) 1FeO3, can also be used for the masking material. This masking material is harder than the components being manufactured and is opaque to the wavelength used in photoresist techniques while being transparent to visible wavelengths over broad thickness ranges. The mask can comprise a patterned layer on a substrate or patterned bulk crystals having regions of different thickness. Substrates such as soda-lime glass, sapphire, quartz, etc. are suitable. The masking material can be deposited as large area films having good uniformity and good optical properties. The material is readily etched but is not attacked by materials used in photoresist processing. Its reflectivity is very low, thereby providing easy alignment and good image defination during use.
Abstract translation: 用于制造半导体和各种小部件的面具。 稀土元素，如GdFeO3，以及YFeO3和LaFeO3都包括掩模材料。 稀土组合，如（Gd，Eu）1FeO3也可用于掩蔽材料。 该掩模材料比正在制造的组件更硬，并且对于在光致抗蚀剂技术中使用的波长是不透明的，同时对宽的厚度范围内的可见波长是透明的。 掩模可以包括在衬底上的图案化层或具有不同厚度的区域的图案化块状晶体。 基体如钠钙玻璃，蓝宝石，石英等都是合适的。 掩模材料可以沉积成具有良好均匀性和良好光学性能的大面积膜。 该材料易于蚀刻，但不受光致抗蚀剂加工中使用的材料的侵蚀。 其反射率非常低，从而在使用过程中提供了方便的对准和良好的图像定位。
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